N. Nakagawa, S. Shibasaki, H. Hiraga, M. Yamazaki, Kazushige Yamamoto, S. Sakurada
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引用次数: 2
Abstract
The potential for high conversion efficiency of the homojunction Cu(In, Ga)Se2 (CIGS) solar cells was examined by device simulations and experimental approaches. The simulation results showed that many electrons in n-CIGS layers could compensate to some extent for the existence of interface states at i-ZnO/n-CIGS interfaces in the homojunction structure. In the case of using the partial electrolyte treatments of CIGS films to produce the n-type doping, the concentrations of the Cd dopants in the n-CIGS layer were 1016 cm-2. The conversion efficiency of 17.2% for this homojunction CIGS solar cell was obtained.
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