{"title":"Analysis of power losses in power MOSFET based stacked polyphase bridges converters","authors":"Lebing Jin, S. Norrga, O. Wallmark","doi":"10.1109/IPEMC.2016.7512782","DOIUrl":null,"url":null,"abstract":"The ability to accurately predict power semiconductor losses is essential for converter design and can provide a reference for thermal management. Based on a stacked polyphase bridges converter, a simplified but accurate loss model is used in this paper to calculate the power losses of power MOSFETs and experimentally verified. A special focus of the analysis is the ringing loss calculation since it is inevitable in the switching process of power MOSFETs. In addition, this paper presents a comparison of power losses between Si MOSFET and GaN FET based converters by using the analytical model.","PeriodicalId":6857,"journal":{"name":"2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia)","volume":"13 1","pages":"3050-3055"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPEMC.2016.7512782","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The ability to accurately predict power semiconductor losses is essential for converter design and can provide a reference for thermal management. Based on a stacked polyphase bridges converter, a simplified but accurate loss model is used in this paper to calculate the power losses of power MOSFETs and experimentally verified. A special focus of the analysis is the ringing loss calculation since it is inevitable in the switching process of power MOSFETs. In addition, this paper presents a comparison of power losses between Si MOSFET and GaN FET based converters by using the analytical model.
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