A new optimization based parasitic parameters extraction method for GaN HEMT with asymmetrical channel structure

Ye Yuan, Z. Zhong, Yong-xin Guo, Shanxiang Mu
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引用次数: 3

Abstract

A good large-signal model relies on the accurate small-signal parameter extraction. In order to get an accurate small signal model, the parasitic parameters must be de-embedded precisely. In this paper, an optimization based parasitic parameters extraction method is proposed. This method take the effect of asymmetrical channel structure at cold-FET condition into consideration.
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基于优化的非对称沟道结构GaN HEMT寄生参数提取新方法
一个好的大信号模型依赖于精确的小信号参数提取。为了得到精确的小信号模型,必须精确地去嵌寄生参数。提出了一种基于优化的寄生参数提取方法。该方法考虑了冷场效应管条件下沟道结构不对称的影响。
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