Pub Date : 2015-07-01DOI: 10.1109/IMWS-AMP.2015.7324930
N. Zhang, Junjie Cheng, Peng-wei Gong, Hongmei Ma
There are two X-band ripples horn single-lens antennas, waveguide transmission segment, fixture, a mounting station, an Agilent N5225A network analyzer and a computer in the free-space measurement system of 8GHz~40GHz frequency range. S11 and S21 of sample measured by network analyzer are used to calculate the dielectric constant. A dual calibration technique of SOLT and GRL is used to eliminate errors due to multiple reflections via the surface of the sample. How the X-band free-space measurement system works at 12.4GHz~40GHz frequency range is introduced and measurement results are reported for some absorbing material.
{"title":"A broadband free-space dielectric measurement system","authors":"N. Zhang, Junjie Cheng, Peng-wei Gong, Hongmei Ma","doi":"10.1109/IMWS-AMP.2015.7324930","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324930","url":null,"abstract":"There are two X-band ripples horn single-lens antennas, waveguide transmission segment, fixture, a mounting station, an Agilent N5225A network analyzer and a computer in the free-space measurement system of 8GHz~40GHz frequency range. S11 and S21 of sample measured by network analyzer are used to calculate the dielectric constant. A dual calibration technique of SOLT and GRL is used to eliminate errors due to multiple reflections via the surface of the sample. How the X-band free-space measurement system works at 12.4GHz~40GHz frequency range is introduced and measurement results are reported for some absorbing material.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"6 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74379596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-01DOI: 10.1109/IMWS-AMP.2015.7324968
Yuerui Lu
Summary form only given. Phosphorene [1,2] is a new family member of two dimensional materials. We observed strong and highly layer dependent photoluminescence in few-layer phosphorene (two to five layers) (Fig. 1). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us to use an optical method to quickly determine the crystalline orientation without tunneling electron microscopy or scanning tunneling microscopy. Our results provide much needed experimental information about the band structures and exciton nature in few-layer phosphorene [3]. Two-dimensional (2D) layered materials, including semi-metallic graphene, semiconducting transition metal dichalcogenides (TMDs) and insulating hexagonal boron nitride (hBN), have been heavily investigated in past decade. Compared with the gapless graphene, most recently investigated TMD semiconductor MoS2 has energy gap in the range of 1.3 eV (bulk) to 1.8 eV (monolayer). MoS2, an indirect band gap material in its bulk form, becomes a direct band gap semiconductor when thinned to a monolayer, enabling significantly enhanced photoluminescence in monolayer MoS2. Black phosphorous (termed as phosphorene) has become a new class of 2D layered material, with predicted layer-dependent band gap ranging from 0.3 eV (bulk) to 1.5 eV (monolayer). Particularly, few-layer phosphorene with narrow band gaps ranging from mid-infrared to near-infrared wavelengths can fill the space between the gapless graphene and the comparably large gap TMD semiconductors. The predicted direct band gap nature in few-layer phosphorene will also enable high-performance optoelectronic devices, compared with the indirect band gap behavior in most few-layer TMD semiconductors. However, so far there has been very little experimental data to confirm the theoretical prediction in few-layer phosphorene.
{"title":"A new two-dimensional material: Phosphorene","authors":"Yuerui Lu","doi":"10.1109/IMWS-AMP.2015.7324968","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324968","url":null,"abstract":"Summary form only given. Phosphorene [1,2] is a new family member of two dimensional materials. We observed strong and highly layer dependent photoluminescence in few-layer phosphorene (two to five layers) (Fig. 1). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us to use an optical method to quickly determine the crystalline orientation without tunneling electron microscopy or scanning tunneling microscopy. Our results provide much needed experimental information about the band structures and exciton nature in few-layer phosphorene [3]. Two-dimensional (2D) layered materials, including semi-metallic graphene, semiconducting transition metal dichalcogenides (TMDs) and insulating hexagonal boron nitride (hBN), have been heavily investigated in past decade. Compared with the gapless graphene, most recently investigated TMD semiconductor MoS2 has energy gap in the range of 1.3 eV (bulk) to 1.8 eV (monolayer). MoS2, an indirect band gap material in its bulk form, becomes a direct band gap semiconductor when thinned to a monolayer, enabling significantly enhanced photoluminescence in monolayer MoS2. Black phosphorous (termed as phosphorene) has become a new class of 2D layered material, with predicted layer-dependent band gap ranging from 0.3 eV (bulk) to 1.5 eV (monolayer). Particularly, few-layer phosphorene with narrow band gaps ranging from mid-infrared to near-infrared wavelengths can fill the space between the gapless graphene and the comparably large gap TMD semiconductors. The predicted direct band gap nature in few-layer phosphorene will also enable high-performance optoelectronic devices, compared with the indirect band gap behavior in most few-layer TMD semiconductors. However, so far there has been very little experimental data to confirm the theoretical prediction in few-layer phosphorene.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"40 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80951823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-01DOI: 10.1109/IMWS-AMP.2015.7324937
Hua Li, Yong-xin Guo, S. Xiao
A wideband, circularly polarized (CP) patch antenna is designed for biomedical telemetry application. The operating band is Industrial, Scientific, and Medical (ISM) of 2.4GHz. By cutting a cross-shaped slot on the ground plane and truncating a pair of corners on the radiating patch ring, the presented antenna can acquire enhancement for impedance and axial ratio (AR) bandwidths. The simulated impedance and AR bandwidths in the HFSS phantom are 16.15%and 6.09%, respectively. The total volume of the antenna is 127mm3.
设计了一种宽带圆极化贴片天线，用于生物医学遥测应用。工作频段为ISM (Industrial, Scientific, and Medical) 2.4GHz。该天线通过在地平面上切割一个十字形槽，截断辐射贴片环上的一对角，实现了阻抗和轴向比带宽的增强。HFSS模拟阻抗和AR带宽分别为16.15%和6.09%。天线的总体积为127mm3。
{"title":"A wideband implantable antenna with circularly polarization","authors":"Hua Li, Yong-xin Guo, S. Xiao","doi":"10.1109/IMWS-AMP.2015.7324937","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324937","url":null,"abstract":"A wideband, circularly polarized (CP) patch antenna is designed for biomedical telemetry application. The operating band is Industrial, Scientific, and Medical (ISM) of 2.4GHz. By cutting a cross-shaped slot on the ground plane and truncating a pair of corners on the radiating patch ring, the presented antenna can acquire enhancement for impedance and axial ratio (AR) bandwidths. The simulated impedance and AR bandwidths in the HFSS phantom are 16.15%and 6.09%, respectively. The total volume of the antenna is 127mm3.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"31 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81141861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-01DOI: 10.1109/IMWS-AMP.2015.7325019
Ziqun. Zhao, Linsheng Wu, Yueping Zhang, J. Mao
A new tunable resonator is proposed with an electrostatically biased multi-walled carbon nanotube (MWCNT). The biasing voltage will induce the self-heating effect in the structure and lead to a nonuniform electric field distribution. The equivalent circuit parameters are obtained by numerically analyzing the related electrothermal coupling. Then, the resonant frequency of the resonator is calculated by the method of multiconductor transmission line. Applied with a proper biasing voltage of 0.6 V, the MWCNT-based resonator can provide a tuning range of 60% for the dominant resonant frequency.
{"title":"Analysis of tunable multi-walled carbon nanotube (MWCNT) based resonator","authors":"Ziqun. Zhao, Linsheng Wu, Yueping Zhang, J. Mao","doi":"10.1109/IMWS-AMP.2015.7325019","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325019","url":null,"abstract":"A new tunable resonator is proposed with an electrostatically biased multi-walled carbon nanotube (MWCNT). The biasing voltage will induce the self-heating effect in the structure and lead to a nonuniform electric field distribution. The equivalent circuit parameters are obtained by numerically analyzing the related electrothermal coupling. Then, the resonant frequency of the resonator is calculated by the method of multiconductor transmission line. Applied with a proper biasing voltage of 0.6 V, the MWCNT-based resonator can provide a tuning range of 60% for the dominant resonant frequency.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"41 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77766674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-01DOI: 10.1109/IMWS-AMP.2015.7324960
H. Cao, Shuai Shang, S. He, Hang Xu, Junjie Liu, Liqiang Yang
In this paper, a novel hybrid coupling structure including a magnetic coupling iris and an electric coupling etched bowtie-shape structure was studied in detail and used to improve the coupling of the two adjacent resonant cavities. The coupling effect provided by the hybrid structure can be accurately modified and optimized by tuning the dimensions of the coupling structure. It was also shown that the electric scatter of the proposed structure allows the implementation of a forward-wave passband propagating below the characteristic cutoff frequency of the waveguide. To demonstrate the validity of the design strategies, a compact 2.4 GHz bandpass HMSIW filter using bowtie-shape coupling structure with sharp selectivity is simulated, fabricated and measured. The dimension of this filter is as small as 0.4λg×0.16λg, where λg is the guide wavelength at the center frequency. The measured results are in good agreement with the simulation.
{"title":"Novel hybrid coupling structure for HMSIW resonators and its application to bandpass filter","authors":"H. Cao, Shuai Shang, S. He, Hang Xu, Junjie Liu, Liqiang Yang","doi":"10.1109/IMWS-AMP.2015.7324960","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324960","url":null,"abstract":"In this paper, a novel hybrid coupling structure including a magnetic coupling iris and an electric coupling etched bowtie-shape structure was studied in detail and used to improve the coupling of the two adjacent resonant cavities. The coupling effect provided by the hybrid structure can be accurately modified and optimized by tuning the dimensions of the coupling structure. It was also shown that the electric scatter of the proposed structure allows the implementation of a forward-wave passband propagating below the characteristic cutoff frequency of the waveguide. To demonstrate the validity of the design strategies, a compact 2.4 GHz bandpass HMSIW filter using bowtie-shape coupling structure with sharp selectivity is simulated, fabricated and measured. The dimension of this filter is as small as 0.4λg×0.16λg, where λg is the guide wavelength at the center frequency. The measured results are in good agreement with the simulation.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"114 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72805062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-01DOI: 10.1109/IMWS-AMP.2015.7325051
W. Lai, Jhin-Fang Huang
A GPS and Miracast RFIC-on-chip antenna in 0.18 um CMOS 1p6M process is presented. The HFSS 3-D EM simulator is employed for design simulation. A printed 1.575GHz and 2.4GHz antenna has been realized by using the CMOS RFIC-on-chip. The measured VSWR is less than 2 from 1.575GHz and 2.4- to 2.483-GHz. This propose super quadric combo antenna in free space, electromagnetic coupling between super quadric antenna and human body and rectangular antenna for wrist watch type wireless communication applications. The measured phase distribution of the input impedance is quite linear and the H-plane patterns are almost omnidirectional and field tried GPS integration. In addition, in order to improve the way controlling this provide switch by software, a novel circuit structure which will control antenna pattern switching automatically by hardware is also developed for wireless healthcare and mobile biomedical application. RFIC-on-chip GPS and Miracast antenna also merger T/R-Switch design on single chip solution for 2.4GHz CMOS transceiver RF front-end. The old man can monitor healthcare and transfer to health center or passive devices by Miracast with software and show GPS location for wearable ambulatory application.
{"title":"Integrated RFIC on-chip and GPS antenna with human body for wrist and wearable communication applications","authors":"W. Lai, Jhin-Fang Huang","doi":"10.1109/IMWS-AMP.2015.7325051","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325051","url":null,"abstract":"A GPS and Miracast RFIC-on-chip antenna in 0.18 um CMOS 1p6M process is presented. The HFSS 3-D EM simulator is employed for design simulation. A printed 1.575GHz and 2.4GHz antenna has been realized by using the CMOS RFIC-on-chip. The measured VSWR is less than 2 from 1.575GHz and 2.4- to 2.483-GHz. This propose super quadric combo antenna in free space, electromagnetic coupling between super quadric antenna and human body and rectangular antenna for wrist watch type wireless communication applications. The measured phase distribution of the input impedance is quite linear and the H-plane patterns are almost omnidirectional and field tried GPS integration. In addition, in order to improve the way controlling this provide switch by software, a novel circuit structure which will control antenna pattern switching automatically by hardware is also developed for wireless healthcare and mobile biomedical application. RFIC-on-chip GPS and Miracast antenna also merger T/R-Switch design on single chip solution for 2.4GHz CMOS transceiver RF front-end. The old man can monitor healthcare and transfer to health center or passive devices by Miracast with software and show GPS location for wearable ambulatory application.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"101 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80377520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-01DOI: 10.1109/IMWS-AMP.2015.7325055
Chun-Hsu Shen, Zhifu Liu, Yunxia Huang, Zhimin Li, Yongxiang Li
In this work, a multi-step solid reaction method was introduced for preparing high performance low temperature sintered microwave dielectric ceramics. The CaO-SiO2-B2O3 ternary system was investigated as a model material. Samples with different Ca/B/Si ratios were prepared. The phase composition, microstructure, and microwave dielectric properties were studied. The major crystalline phases of the studied compositions were CaSiO3, Ca2B2O5, and SiO2. Bar-like crystallized phase were observed from the scanning electron microscopy images. Among these studied compositions, the 42%CaO-26%B2O3-32%SiO2 component showed excellent microwave dielectric properties with a dielectric constant of 6.2 and Q·f value of 28200 (@13 GHz) at a sintering temperature of 980°C. The low dielectric loss attributes to the glass-free process and highly crystallized phase compositions. The sintering temperature could be reduced to 900°C by adding the BBAS material, and a dielectric constant of 5.9 and Q·f value of 11200 (@13 GHz) was obtained. The low temperature sintered ceramic is cofirable with Ag electrode.
{"title":"High performance low temperature sintered microwave dielectric ceramics prepared by solid-state reaction","authors":"Chun-Hsu Shen, Zhifu Liu, Yunxia Huang, Zhimin Li, Yongxiang Li","doi":"10.1109/IMWS-AMP.2015.7325055","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325055","url":null,"abstract":"In this work, a multi-step solid reaction method was introduced for preparing high performance low temperature sintered microwave dielectric ceramics. The CaO-SiO<sub>2</sub>-B<sub>2</sub>O<sub>3</sub> ternary system was investigated as a model material. Samples with different Ca/B/Si ratios were prepared. The phase composition, microstructure, and microwave dielectric properties were studied. The major crystalline phases of the studied compositions were CaSiO<sub>3</sub>, Ca<sub>2</sub>B<sub>2</sub>O<sub>5</sub>, and SiO<sub>2</sub>. Bar-like crystallized phase were observed from the scanning electron microscopy images. Among these studied compositions, the 42%CaO-26%B<sub>2</sub>O<sub>3</sub>-32%SiO<sub>2</sub> component showed excellent microwave dielectric properties with a dielectric constant of 6.2 and Q·f value of 28200 (@13 GHz) at a sintering temperature of 980°C. The low dielectric loss attributes to the glass-free process and highly crystallized phase compositions. The sintering temperature could be reduced to 900°C by adding the BBAS material, and a dielectric constant of 5.9 and Q·f value of 11200 (@13 GHz) was obtained. The low temperature sintered ceramic is cofirable with Ag electrode.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"18 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82512553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-01DOI: 10.1109/IMWS-AMP.2015.7324929
L. Hao, J. Gallop, Jie Chen
Single and two dimensional carbon materials represent a major development in advanced materials of the past two decades, with potential major disruptive applications across ICT, high frequency electronics. The microwave interactions of these materials has only much more recently been investigated. In this paper we present details of a very sensitive non-invasive method to characterize the electrical properties of graphene at the large scale, also the investigation of carbon nanotubes as high frequency interconnects and graphene nano-electromechanical resonators driven and detected by a microwave resonator near-field technique. We speculate on future microwave and reduced dimension carbon applications.
{"title":"Microwaves and low dimension carbon: Characterisation and applications","authors":"L. Hao, J. Gallop, Jie Chen","doi":"10.1109/IMWS-AMP.2015.7324929","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324929","url":null,"abstract":"Single and two dimensional carbon materials represent a major development in advanced materials of the past two decades, with potential major disruptive applications across ICT, high frequency electronics. The microwave interactions of these materials has only much more recently been investigated. In this paper we present details of a very sensitive non-invasive method to characterize the electrical properties of graphene at the large scale, also the investigation of carbon nanotubes as high frequency interconnects and graphene nano-electromechanical resonators driven and detected by a microwave resonator near-field technique. We speculate on future microwave and reduced dimension carbon applications.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"2005 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78877620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-01DOI: 10.1109/IMWS-AMP.2015.7324962
Xu Wang, Fengjin Xia, Na Li, Jia Wang, Chunguang Li, Xueqiang Zhang, Y. Bian, Guoqiang Li, Yun Wu, Hong Li, Liang Sun, Yusheng He
This paper presented a YBCO/Ba0.05Sr0.95TiO3 (BST-0.05) heterostructure thin film interdigital varactor grown on a MgO substrate by pulsed laser deposition (PLD). The microwave properties of the BST film were characterized at cryogenic temperature. The dielectric constant changed 78 % from 1160 to 252 and loss tangent was in the range of 0.01-0.02. An L-band four pole tunable high temperature superconductor (HTS) bandpass filter with semiconductor varactors as tuning elements was also presented in this paper. For a dc bias voltage of 0.5-8 V, the filter center frequency tuned from 1.25 GHz to 1.58 GHz, with an insertion loss of 1.7-1 dB, a 40 dB/3 dB shape factor better than 3.7, and a reflection better than -10.4 dB.
{"title":"A YBCO/BST/MgO interdigital varactor and an L-band tunable HTS bandpass filter","authors":"Xu Wang, Fengjin Xia, Na Li, Jia Wang, Chunguang Li, Xueqiang Zhang, Y. Bian, Guoqiang Li, Yun Wu, Hong Li, Liang Sun, Yusheng He","doi":"10.1109/IMWS-AMP.2015.7324962","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324962","url":null,"abstract":"This paper presented a YBCO/Ba0.05Sr0.95TiO3 (BST-0.05) heterostructure thin film interdigital varactor grown on a MgO substrate by pulsed laser deposition (PLD). The microwave properties of the BST film were characterized at cryogenic temperature. The dielectric constant changed 78 % from 1160 to 252 and loss tangent was in the range of 0.01-0.02. An L-band four pole tunable high temperature superconductor (HTS) bandpass filter with semiconductor varactors as tuning elements was also presented in this paper. For a dc bias voltage of 0.5-8 V, the filter center frequency tuned from 1.25 GHz to 1.58 GHz, with an insertion loss of 1.7-1 dB, a 40 dB/3 dB shape factor better than 3.7, and a reflection better than -10.4 dB.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"5 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87290443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-01DOI: 10.1109/IMWS-AMP.2015.7324912
Haidong Hao, Z. Tang, L. Xin
In this paper, issues a novel Flip-chip (FC) package model simulation of THz on a chip integrated antenna. Log periodic antenna is designed on a GaAs substrate, with a thickness of 100 μm. An air bridge of Schottky Diode located at the center of the antenna is protected by using thin-film ceramic layer for supporting layer. About 200 μm diameter Au pad on GaAs substrate is connected to the PCB board via thin-film ceramic layer. There is an air chamber underneath the antenna to improve antenna performance and mitigate multilayer structure influence the near filed of antenna. The FC package mode cause simulation results performance to deteriorate. Nevertheless, good performance has been obtained up to around 0.25-0.34 THz (λ=1200μm-880μm). Thus, FC processing with thin-film ceramic layer has been proven to be one solution for THz region antenna package. Which can give simplicity and possibility of designing large format arrays on a direct detection or heterodyne detection THz system.
{"title":"Simulation of a novel flip-chip antenna in THz region","authors":"Haidong Hao, Z. Tang, L. Xin","doi":"10.1109/IMWS-AMP.2015.7324912","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324912","url":null,"abstract":"In this paper, issues a novel Flip-chip (FC) package model simulation of THz on a chip integrated antenna. Log periodic antenna is designed on a GaAs substrate, with a thickness of 100 μm. An air bridge of Schottky Diode located at the center of the antenna is protected by using thin-film ceramic layer for supporting layer. About 200 μm diameter Au pad on GaAs substrate is connected to the PCB board via thin-film ceramic layer. There is an air chamber underneath the antenna to improve antenna performance and mitigate multilayer structure influence the near filed of antenna. The FC package mode cause simulation results performance to deteriorate. Nevertheless, good performance has been obtained up to around 0.25-0.34 THz (λ=1200μm-880μm). Thus, FC processing with thin-film ceramic layer has been proven to be one solution for THz region antenna package. Which can give simplicity and possibility of designing large format arrays on a direct detection or heterodyne detection THz system.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"18 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87423616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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