Theoretical Study of Photo-Luminescence Emission Using the Line Shape Function for Semiconductor Quantum Dots

P. H. Krishna, D. Jagwani, M. Ramrakhiani
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引用次数: 1

Abstract

The outcome of particle size effect on Photoluminescence has been investigated theoretically for CdS, ZnS, CdSe and ZnSe quantum dots. The theory is based on computational modeling in the strong confinement region only where the particle size is less than Bohr’s radius. The Photoluminescence emission line shape function which depends on band gap was found to be strongly dependent on particle size. The PL spectra of bulk material is similar for the quantum dots where similar vibronic coupling and normalized intensity is considered, only the peak wavelength changes and thus shifts the band edge luminescence peak to higher energies for the quantum dots corresponding to their band gap with no broadening. The PL spectra of monodisperse dots revels the fact that the shape of the emission peak is same, only it shift towards higher energy or smaller wavelength for decreasing size of quantum dots.
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利用半导体量子点线形函数的光致发光理论研究
对CdS、ZnS、CdSe和ZnSe量子点的光致发光效应进行了理论研究。该理论是基于强约束区的计算模型,其中颗粒尺寸小于玻尔半径。发现与带隙有关的光致发光线形函数与粒径有很强的相关性。当考虑相似的振动耦合和归一化强度时,块状材料的量子点的PL光谱是相似的,只有峰值波长发生变化,从而使量子点的带边发光峰向其带隙对应的更高能量移动,而没有展宽。单分散量子点的发光光谱显示,由于量子点尺寸的减小,发射峰的形状是相同的,只是向更高的能量或更小的波长偏移。
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