A 13.1% tuning range 115GHz frequency generator based on an injection-locked frequency doubler in 65nm CMOS

A. Mazzanti, E. Monaco, M. Pozzoni, F. Svelto
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引用次数: 17

Abstract

Ultra-scaled CMOS devices offer the possibility of operation beyond 100GHz where new applications are envisioned in the near future, including imaging and spectroscopy systems for scientific, medical, space, and industrial applications at low cost, light weight and easy assembly [1]. However, a long path toward complete systems of any commercial interest is required, even though simple building blocks have already been presented [2–6]. One of the challenges of such high-frequency transceivers is the on-chip reference generation. Adoption of a voltage-controlled oscillator (VCO) at fundamental frequency sets an increasingly severe trade-off between high spectral purity and frequency tuning due to a dramatic reduction of resonator quality factor and large parasitics introduced by active devices and buffers, operating close to the transition frequency. As an example, state-of-the-art varactor-tuned VCOs beyond 100GHz in standard CMOS technology display a tuning range of less than 3%, not enough to cover process spreads [3–5]. An alternative solution relies on frequency multiplication of a lower frequency reference, with the potential advantage of a higher tuning range and lower phase noise set by the lower frequency VCO enslaving the multiplier.
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基于注入锁定倍频器的13.1%调谐范围115GHz频率发生器
超尺度CMOS器件提供了超过100GHz的运行可能性,在不久的将来,将有新的应用,包括用于科学、医疗、空间和工业应用的成像和光谱系统,其成本低、重量轻、易于组装[1]。然而,即使已经提出了简单的构建模块[2-6],实现具有任何商业利益的完整系统仍需要漫长的道路。这种高频收发器的挑战之一是片上参考生成。在基频上采用压控振荡器(VCO),由于谐振器质量因子的显著降低,以及主源器件和缓冲器引入的较大寄生效应,在接近过渡频率的地方工作,使得高频谱纯度和频率调谐之间的权衡越来越严重。例如,标准CMOS技术中超过100GHz的最先进变容调谐vco显示的调谐范围小于3%,不足以覆盖工艺扩散[3-5]。另一种解决方案依赖于较低频率参考的频率倍增,其潜在优势是更高的调谐范围和较低的相位噪声,由较低频率的压控振荡器控制乘法器。
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