Synthesis and study of a new mixed-layered compound GeBi3Te4 belonging to the nBi2–mGeBi2Te4 homologous series

F.R. Aliyev, E. Orujlu, D. Babanly
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Abstract

In light of the structural properties of tetradymite-like layered chalcogenide compounds, the mixed-layered compound GeBi3Te4 was predicted and synthesized for the first time, which belongs to the nBi2–mGeBi2Te4 homologous series in the Ge-Te-Bi system. A polycrystal of a new phase was synthesized, and its single crystal was grown by the Bridgman–Stockbarger method. The obtained samples were investigated by differential thermal analysis (DTA) and powder X-ray diffraction (XRD). It was found that the compound melts peritectically at 563 C and has a rhombohedral lattice-type structure with the following lattice parameters: a =4.3625 (5) Å, c = 31.381 (2) Å (sp. gr R3m). The crystal structure of the layered van der Waals compound GeBi3Te4 consists of a repetition of seven-layer GeBi2Te4 packets and two-layer Bi packets in the form of -7-2-7-7-2-7-7-2-7- which differ from the previously discovered GeBi4Te4 phase, which consists of unit cells from only one seven-layer packet. The discovery of a new mixed-layered compound indicates the possibility of the formation of similar compounds in AIV–BV–Te (AIV = Ge, Sn, Pb; BV = Sb, Bi) systems
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nBi2-mGeBi2Te4同源系列混合层状化合物GeBi3Te4的合成与研究
根据类四白菌层状硫族化合物的结构性质,首次预测并合成了混合层状化合物GeBi3Te4,该化合物属于Ge-Te-Bi体系中的nBi2-mGeBi2Te4同源系。合成了一种新相的多晶,并用Bridgman-Stockbarger法生长了单晶。采用差热分析(DTA)和粉末x射线衍射(XRD)对所得样品进行了表征。结果表明,该化合物在563℃时呈周晶熔化,具有菱形晶格型结构,晶格参数为:a =4.3625 (5) Å, C = 31.381 (2) Å (sp. gr R3m)。层状范德华化合物GeBi3Te4的晶体结构由七层GeBi2Te4包和两层Bi包的重复组成,其形式为-7-2-7- 2-7-7- 7-7-这与先前发现的GeBi4Te4相不同,后者仅由一个七层包的单位细胞组成。新混合层化合物的发现表明AIV - bv - te中有可能形成类似的化合物(AIV = Ge, Sn, Pb;BV = Sb, Bi)系
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