{"title":"Modified Optical Properties of Arsenic Selenide Thin Film at Low Temperatures","authors":"Maher Abdullah","doi":"10.33899/rjs.2023.178576","DOIUrl":null,"url":null,"abstract":"With the simultaneous thermal spraying of glassy arsenic selenide (As 2 Se 3 ), a significant influence of the introduced Indium (In) and Selenium (Se) on the films' structural and photovoltaic properties was established. The glassy As 2 Se 3 and In or Se were deposited simultaneously at up to 60 nm/s on cooled substrates at different temperatures ranging from 70 to -50 °C, layers with a thickness of 0.5 to 1 m in a vacuum 10-3 Pa. Films produced on low-temperature substrates result in structural modifications that can be utilized for lithography and electrically active defects. The energy necessary for the As 2 Se 3 annealing technique, according to the results, is equal to 0.57 eV of high-temperature energy. When Se is supplied at a temperature of -50 °C, we saw that the photocurrent increases at low temperatures. The image is minimally affected by Se increases greater than 7%. The solubility time of the non-irradiated segment is 5 seconds, the rest layer dissolves in 12 seconds, and the thickness of the rest layer is above 75%.","PeriodicalId":20803,"journal":{"name":"Rafidain journal of science","volume":"48 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Rafidain journal of science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.33899/rjs.2023.178576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
With the simultaneous thermal spraying of glassy arsenic selenide (As 2 Se 3 ), a significant influence of the introduced Indium (In) and Selenium (Se) on the films' structural and photovoltaic properties was established. The glassy As 2 Se 3 and In or Se were deposited simultaneously at up to 60 nm/s on cooled substrates at different temperatures ranging from 70 to -50 °C, layers with a thickness of 0.5 to 1 m in a vacuum 10-3 Pa. Films produced on low-temperature substrates result in structural modifications that can be utilized for lithography and electrically active defects. The energy necessary for the As 2 Se 3 annealing technique, according to the results, is equal to 0.57 eV of high-temperature energy. When Se is supplied at a temperature of -50 °C, we saw that the photocurrent increases at low temperatures. The image is minimally affected by Se increases greater than 7%. The solubility time of the non-irradiated segment is 5 seconds, the rest layer dissolves in 12 seconds, and the thickness of the rest layer is above 75%.