Gas Sensing Investigation of Porous Hot-wire Molybdenum Disulphide Thin Films

Abstract

Graphical abstract The schematic of the testing structure is shown in the following picture. The hwMoS 2 thin films were deposited on Si (100) wafers covered by a 100 nm thick thermal silicon oxide. Over the latter, gold interdigitated electrodes were patterned using ebeam evaporation and the lift-off technique. Reversible changes of current were caused by the presence or upon removal of chemical gases such as hydrogen (H 2 ) and carbon monoxide (CO).