A High Speed Programmable Ring Oscillator Using InGaZnO Thin-Film Transistors

Abstract

This paper presents a high speed digitally programmable Ring Oscillator (RO) using Indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). Proposed circuit ensures high speed compared to the conventional ROs using negative skewed scheme, in which each inverter delay is reduced by pre-maturely switching on/off the transistors. In addition, by controlling the load capacitance of each inverter through digital control bits, a programmable frequency of oscillation was attained. Proposed RO performance is compared with two conventional designs under same conditions. From simulation, it has been observed that the proposed circuit has shown a higher frequency of oscillations (283 KHz) compared to the conventional designs (76.52 KHz and 144.9 KHz) under same conditions. Due to the programmable feature, the circuit is able to generate 8 different linearly spaced frequencies ranging from 241.2 KHz to 283 KHz depending upon three digital control bits with almost rail-to-rail voltage swing. The circuit is a potential on-chip clock generator in many real-world flexible systems, such as, smart packaging, wearable devices, RFIDs and displays that need multi frequencies.