Novel Polymer Substrate-Based 1.2 kV/40: A Double-Sided Intelligent Power Module

Xin Zhao, Yifan Jiang, Bo Gao, Kenji Nishiguchi, Y. Fukawa, D. Hopkins
{"title":"Novel Polymer Substrate-Based 1.2 kV/40: A Double-Sided Intelligent Power Module","authors":"Xin Zhao, Yifan Jiang, Bo Gao, Kenji Nishiguchi, Y. Fukawa, D. Hopkins","doi":"10.1109/ECTC.2017.285","DOIUrl":null,"url":null,"abstract":"Advanced power module packaging technology is currently being heavily investigated to take full advantage of Wide Band Gap (WBG) power semiconductor devices. As one of most widely applied power module technologies, intelligent power modules, typically for automotive industries, work well to achieve higher operating frequencies with lower losses by integrating gate driver circuits with power semiconductor devices. In this paper, a novel flexible polymer substrate-based intelligent power module is developed and characterized. By applying 80 µm-thick epoxy-resin based flexible dielectric as a substrate, the overall weight and volume of the power module is reduced, as well as the cost, compared with traditional direct bonded copper ceramic-based modules. The performance of the epoxy-resin based dielectric is investigated, and shows that the leakage current of the dielectric at >1.5 kV is less than 20 µA at 250 oC. Double-sided solderable 1.2 kV SiC MOSFETs and Schottky diodes are fabricated and applied in the module without bonding wires, significantly reducing the overall parasitic inductance to","PeriodicalId":6557,"journal":{"name":"2017 IEEE 67th Electronic Components and Technology Conference (ECTC)","volume":"36 1","pages":"1461-1467"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 67th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2017.285","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Advanced power module packaging technology is currently being heavily investigated to take full advantage of Wide Band Gap (WBG) power semiconductor devices. As one of most widely applied power module technologies, intelligent power modules, typically for automotive industries, work well to achieve higher operating frequencies with lower losses by integrating gate driver circuits with power semiconductor devices. In this paper, a novel flexible polymer substrate-based intelligent power module is developed and characterized. By applying 80 µm-thick epoxy-resin based flexible dielectric as a substrate, the overall weight and volume of the power module is reduced, as well as the cost, compared with traditional direct bonded copper ceramic-based modules. The performance of the epoxy-resin based dielectric is investigated, and shows that the leakage current of the dielectric at >1.5 kV is less than 20 µA at 250 oC. Double-sided solderable 1.2 kV SiC MOSFETs and Schottky diodes are fabricated and applied in the module without bonding wires, significantly reducing the overall parasitic inductance to
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新型聚合物基板1.2 kV/40:双面智能电源模块
为了充分利用宽带隙(WBG)功率半导体器件的优势,目前正在大力研究先进的功率模块封装技术。智能功率模块是应用最广泛的功率模块技术之一,通常用于汽车工业,通过将栅极驱动电路与功率半导体器件集成在一起,可以很好地实现更高的工作频率和更低的损耗。本文研制了一种基于柔性聚合物基板的智能电源模块。与传统的直接键合铜陶瓷模块相比,采用80 μ m厚的环氧树脂基柔性电介质作为衬底,降低了功率模块的整体重量和体积,降低了成本。研究了环氧树脂基介电材料的性能,结果表明,在250℃时,介电材料在>1.5 kV时的漏电流小于20µA。该模块采用双面可焊1.2 kV SiC mosfet和肖特基二极管,无需焊线,显著降低了整体寄生电感至
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