Hybrid Additive Manufacture of Conformal Antennas

M. N. Esfahani, M. P. Shuttleworth, R. A. Harris, R. Kay, V. Doychinov, I. Robertson, J. Marqués-Hueso, T. Jones, A. Ryspayeva, M. Desmulliez
{"title":"Hybrid Additive Manufacture of Conformal Antennas","authors":"M. N. Esfahani, M. P. Shuttleworth, R. A. Harris, R. Kay, V. Doychinov, I. Robertson, J. Marqués-Hueso, T. Jones, A. Ryspayeva, M. Desmulliez","doi":"10.1109/IMWS-AMP.2018.8457128","DOIUrl":null,"url":null,"abstract":"This paper presents a new digitally driven manufacturing process chain for the production of high performance, three-dimensional RF devices. This is achieved by combining Fused Filament Fabrication of polyetherimide based polymer with selective light-based synthesis of silver nanoparticles and electrochemical deposition of copper. The resultant manufacturing method produces devices with excellent DC electrical resistivity (6.68 μΩ cm) and dielectric properties (relative permittivity of 2.67 and loss tangent of 0.001). Chemically modifying and patterning the substrate to produce the metallization overcomes many of the limitations of direct write deposition methods resulting in improved performance, adhesion and resolution of the antenna pattern. The fabricated demonstrators cover a broadband range of 0.1 GHz – 10 GHz and the measured results show a direct agreement with the simulated design over a wide frequency band. Overall the materials used as a substrate have a low relative permittivity and lower dielectric loss than FR-4, thereby making them well suited for antenna applications.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"236 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2018.8457128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

This paper presents a new digitally driven manufacturing process chain for the production of high performance, three-dimensional RF devices. This is achieved by combining Fused Filament Fabrication of polyetherimide based polymer with selective light-based synthesis of silver nanoparticles and electrochemical deposition of copper. The resultant manufacturing method produces devices with excellent DC electrical resistivity (6.68 μΩ cm) and dielectric properties (relative permittivity of 2.67 and loss tangent of 0.001). Chemically modifying and patterning the substrate to produce the metallization overcomes many of the limitations of direct write deposition methods resulting in improved performance, adhesion and resolution of the antenna pattern. The fabricated demonstrators cover a broadband range of 0.1 GHz – 10 GHz and the measured results show a direct agreement with the simulated design over a wide frequency band. Overall the materials used as a substrate have a low relative permittivity and lower dielectric loss than FR-4, thereby making them well suited for antenna applications.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
共形天线的混合增材制造
本文提出了一种新的数字驱动制造工艺链,用于生产高性能、三维射频器件。这是通过结合熔融长丝制造聚醚酰亚胺基聚合物、选择性光基合成纳米银和电化学沉积铜来实现的。由此产生的制造方法生产的器件具有优异的直流电阻率(6.68 μΩ cm)和介电性能(相对介电常数为2.67,损耗正切为0.001)。化学修饰和图像化基板以产生金属化,克服了直接写入沉积方法的许多限制,从而提高了天线图像化的性能,附着力和分辨率。在0.1 GHz ~ 10ghz的宽带范围内,实验结果与仿真设计在较宽的频带范围内完全吻合。总的来说,用作衬底的材料具有比FR-4低的相对介电常数和更低的介电损耗,从而使它们非常适合天线应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
3D Printing of Ka band Orthomode Transducers Polymer-based 3D Printed Millimeter-wave Components for Spacecraft Payloads Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors Microwave-Driven CPW Microplasma Generator for Low-Power Discharge Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1