Pub Date : 2018-07-16DOI: 10.1109/IMWS-AMP.2018.8457142
S. Lucyszyn, X. Shang, W. J. Otter, C. Myant, Ran Cheng, N. Ridler
This paper summarizes the current state of research & development within the U.K. for polymer-based 3D printed guided-wave and quasi-optical components for spacecraft payloads. Preliminary measured results look promising and show that this emerging technology may well overtake existing machined technologies in the not too distant future for general aerospace applications.
{"title":"Polymer-based 3D Printed Millimeter-wave Components for Spacecraft Payloads","authors":"S. Lucyszyn, X. Shang, W. J. Otter, C. Myant, Ran Cheng, N. Ridler","doi":"10.1109/IMWS-AMP.2018.8457142","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457142","url":null,"abstract":"This paper summarizes the current state of research & development within the U.K. for polymer-based 3D printed guided-wave and quasi-optical components for spacecraft payloads. Preliminary measured results look promising and show that this emerging technology may well overtake existing machined technologies in the not too distant future for general aerospace applications.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"48 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86201254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-16DOI: 10.1109/IMWS-AMP.2018.8457143
G. Addamo, O. Peverini, G. Virone, F. Paonessa, D. Manfredi, F. Calignano
In this paper, the advance of an on-going research activity jointly developed by CNR-IEIIT, IIT and Politecnico di Torino in the design and SLM manufacturing of high performances microwave devices is reported. In particular, two prototypes of Ka-band Orthomode Transducers, based on a novel AM-oriented layout, are presented. All the component building blocks, such as, coupling junction, bends and twists are integrated in a single mechanical part suitable for 3D printing.
{"title":"3D Printing of Ka band Orthomode Transducers","authors":"G. Addamo, O. Peverini, G. Virone, F. Paonessa, D. Manfredi, F. Calignano","doi":"10.1109/IMWS-AMP.2018.8457143","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457143","url":null,"abstract":"In this paper, the advance of an on-going research activity jointly developed by CNR-IEIIT, IIT and Politecnico di Torino in the design and SLM manufacturing of high performances microwave devices is reported. In particular, two prototypes of Ka-band Orthomode Transducers, based on a novel AM-oriented layout, are presented. All the component building blocks, such as, coupling junction, bends and twists are integrated in a single mechanical part suitable for 3D printing.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"36 1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76876197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457153
K. Chabak, D. Walker, A. Green, A. Crespo, M. Lindquist, K. Leedy, S. Tetlak, R. Gilbert, N. Moser, G. Jessen
Beta-gallium oxide (BGO) radio frequency device performance is presented using sub-micron T-shaped gates. In the first design, a gate-recess is implemented to allow gate and channel device scaling which results in $text{f}_{mathbf {t}} {/mathbf {f}} _{mathbf {max}} quad =$ 3/13 GHz at $text{V}_{mathbf {DS}} quad =$ 40 V. The second approach uses a thin and higher doped channel with a T-gate formed by electron beam lithography. An $text{f}_{mathbf {t}} {/mathbf {f}} _{mathbf {max}} quad =$ 5/17 GHz is measured at ${V}_{DS} =$ 15 V and is the highest reported for BGO transistors. Significant gains in RF performance are expected with reduction of device parasitics and vertically scaled epitaxial designs.
{"title":"Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors","authors":"K. Chabak, D. Walker, A. Green, A. Crespo, M. Lindquist, K. Leedy, S. Tetlak, R. Gilbert, N. Moser, G. Jessen","doi":"10.1109/IMWS-AMP.2018.8457153","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457153","url":null,"abstract":"Beta-gallium oxide (BGO) radio frequency device performance is presented using sub-micron T-shaped gates. In the first design, a gate-recess is implemented to allow gate and channel device scaling which results in $text{f}_{mathbf {t}} {/mathbf {f}} _{mathbf {max}} quad =$ 3/13 GHz at $text{V}_{mathbf {DS}} quad =$ 40 V. The second approach uses a thin and higher doped channel with a T-gate formed by electron beam lithography. An $text{f}_{mathbf {t}} {/mathbf {f}} _{mathbf {max}} quad =$ 5/17 GHz is measured at ${V}_{DS} =$ 15 V and is the highest reported for BGO transistors. Significant gains in RF performance are expected with reduction of device parasitics and vertically scaled epitaxial designs.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"45 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74356504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457147
K. Alhassoon, Y. Malallah, A. Sarnaik, C. Kolwalkar, D. N. Kumar, A. Daryoush
3D additive printing have been employed recently for manufacturing a wide variety of Radio Frequency (RF) components on planar and conformal structures. The design and modeling step requires an accurate electromagnetic (EM) characterization of the 3D printed dielectric material at RF frequencies. The broadband and accurate material extraction techniques are based on best fitting of simulated to measured scattering (S) parameters. The simulation is based on Finite Element Method (FEM) solver for full-wave electromagnetic fields and the measurement was obtained through network analyzer for microstrip transmission lines (TL) and annular ring (AR) resonators. An initial broadband characterization utilizing a transmission line of three different lengths are initially modeled and fabricated on unknown 3D printed substrate and compared to known RT/Duroid substrate for error analysis. A higher accuracy narrowband characterization is achieved with best fitting process of enclosed annular ring resonators realized at 2.4 and 5.4GHz.
{"title":"Broadband and Accurate Material Characterization of 3D Manufactured RF Structures","authors":"K. Alhassoon, Y. Malallah, A. Sarnaik, C. Kolwalkar, D. N. Kumar, A. Daryoush","doi":"10.1109/IMWS-AMP.2018.8457147","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457147","url":null,"abstract":"3D additive printing have been employed recently for manufacturing a wide variety of Radio Frequency (RF) components on planar and conformal structures. The design and modeling step requires an accurate electromagnetic (EM) characterization of the 3D printed dielectric material at RF frequencies. The broadband and accurate material extraction techniques are based on best fitting of simulated to measured scattering (S) parameters. The simulation is based on Finite Element Method (FEM) solver for full-wave electromagnetic fields and the measurement was obtained through network analyzer for microstrip transmission lines (TL) and annular ring (AR) resonators. An initial broadband characterization utilizing a transmission line of three different lengths are initially modeled and fabricated on unknown 3D printed substrate and compared to known RT/Duroid substrate for error analysis. A higher accuracy narrowband characterization is achieved with best fitting process of enclosed annular ring resonators realized at 2.4 and 5.4GHz.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"15 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81918306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457134
Scott M. Gillette, Michael Geiler, J. Adam, A. Geiler
Ferrimagnetic materials possess unique nonlinear properties at RF/microwave frequencies that enable analog signal processing effects such as frequency selective limiters (FSL) with low-loss (< 3 dB), low power thresholds (< -20 dBm), flat limiting response, high selectivity (< 5 MHz), and rapid response times (< 5 us). FSL technologies can be used to add capability to radar, electronic warfare, and communications systems by protecting them from high power microwave attack, preserving sensitivity to signals-of-interest, and extending front end receiver dynamic range. Recent developments in reflectivetype FSL devices are presented here.
{"title":"Ferrite-Based Reflective-Type Frequency Selective Limiters","authors":"Scott M. Gillette, Michael Geiler, J. Adam, A. Geiler","doi":"10.1109/IMWS-AMP.2018.8457134","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457134","url":null,"abstract":"Ferrimagnetic materials possess unique nonlinear properties at RF/microwave frequencies that enable analog signal processing effects such as frequency selective limiters (FSL) with low-loss (< 3 dB), low power thresholds (< -20 dBm), flat limiting response, high selectivity (< 5 MHz), and rapid response times (< 5 us). FSL technologies can be used to add capability to radar, electronic warfare, and communications systems by protecting them from high power microwave attack, preserving sensitivity to signals-of-interest, and extending front end receiver dynamic range. Recent developments in reflectivetype FSL devices are presented here.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"68 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89072267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457152
C. Vélez, J. Ewing, Seahee Hwangbo, K. Sondhi, T. Schumann, Y. Yoon, D. Arnold
This paper reports the fabrication and characterization of thick, self-biased hexaferrite magnetic structures patterned on planar substrates for integrated millimeter-wave (mm-wave) device applications. Using all lowtemperature processes, BaFe12O19 micro/nanoparticles (from three different vendors) and polymeric binder (PDMS) are screenprinted into removable molds to form 600-μm-diameter, 144-μm-thick test structures. The crystallography, morphology, and DC magnetic hysteresis curves are evaluated. Methods are shown for imposing magnetic anisotropy in the films. A direct measurement of the RF properties using a coplanar waveguide test structure is performed, showing a ferromagnetic resonance (FMR) frequency of 45.9 GHz with tunability via an external magnetic field.
{"title":"Low-Temperature Micropatterning of Thick-Film BaFe12O19 Composites on Semiconductor Substrates for Integrated Millimeter Wave Devices","authors":"C. Vélez, J. Ewing, Seahee Hwangbo, K. Sondhi, T. Schumann, Y. Yoon, D. Arnold","doi":"10.1109/IMWS-AMP.2018.8457152","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457152","url":null,"abstract":"This paper reports the fabrication and characterization of thick, self-biased hexaferrite magnetic structures patterned on planar substrates for integrated millimeter-wave (mm-wave) device applications. Using all lowtemperature processes, BaFe12O19 micro/nanoparticles (from three different vendors) and polymeric binder (PDMS) are screenprinted into removable molds to form 600-μm-diameter, 144-μm-thick test structures. The crystallography, morphology, and DC magnetic hysteresis curves are evaluated. Methods are shown for imposing magnetic anisotropy in the films. A direct measurement of the RF properties using a coplanar waveguide test structure is performed, showing a ferromagnetic resonance (FMR) frequency of 45.9 GHz with tunability via an external magnetic field.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"44 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76550648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/imws-amp.2018.8457135
{"title":"IMWS-AMP 2018 Program","authors":"","doi":"10.1109/imws-amp.2018.8457135","DOIUrl":"https://doi.org/10.1109/imws-amp.2018.8457135","url":null,"abstract":"","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78335558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457130
D. Branch, C. Nordquist, M. Eichenfield, J. K. Douglas, A. Siddiqui, T. Friedmann
Electric field-based frequency tuning of acoustic resonators at the material level provides an enabling technology for building complex tunable filters. Tunable acoustic resonators were fabricated in thin plates (h/$lambda sim 0.05)$ of X-cut lithium niobate (90°, 90°, ψ = 170°). Lithium niobate is known for its large electromechanical coupling (SH: K2 40%) and thus applicability for low-insertion loss and wideband filter applications. We demonstrate the effect of a DC bias to shift the resonant frequency by ~ 0.4% by directly tuning the resonator material. The mechanism is based on the nonlinearities that exist in the piezoelectric properties of lithium niobate. Devices centered at 332 MHz achieved frequency tuning of 12 kHz/V through application of a DC bias.
基于电场的材料级声学谐振器频率调谐为构建复杂的可调谐滤波器提供了一种使能技术。在x切割铌酸锂(90°，90°，ψ = 170°)的薄板(h/ $lambda sim 0.05)$)上制备了可调谐声学谐振器。铌酸锂以其大型机电耦合(SH: K2 40)而闻名%) and thus applicability for low-insertion loss and wideband filter applications. We demonstrate the effect of a DC bias to shift the resonant frequency by ~ 0.4% by directly tuning the resonator material. The mechanism is based on the nonlinearities that exist in the piezoelectric properties of lithium niobate. Devices centered at 332 MHz achieved frequency tuning of 12 kHz/V through application of a DC bias.
{"title":"Investigation of a Solid-State Tuning Behavior in Lithium Niobate","authors":"D. Branch, C. Nordquist, M. Eichenfield, J. K. Douglas, A. Siddiqui, T. Friedmann","doi":"10.1109/IMWS-AMP.2018.8457130","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457130","url":null,"abstract":"Electric field-based frequency tuning of acoustic resonators at the material level provides an enabling technology for building complex tunable filters. Tunable acoustic resonators were fabricated in thin plates (h/$lambda sim 0.05)$ of X-cut lithium niobate (90°, 90°, ψ = 170°). Lithium niobate is known for its large electromechanical coupling (SH: K2 40%) and thus applicability for low-insertion loss and wideband filter applications. We demonstrate the effect of a DC bias to shift the resonant frequency by ~ 0.4% by directly tuning the resonator material. The mechanism is based on the nonlinearities that exist in the piezoelectric properties of lithium niobate. Devices centered at 332 MHz achieved frequency tuning of 12 kHz/V through application of a DC bias.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"43 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80736454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457144
T. Razzak, H. Xue, Zhanbo Xia, Seongmo Hwang, Asif Khan, W. Lu, S. Rajan
Gallium Nitride electronics based on the AlGaN/GaN high electron mobility transistor structure is approaching intrinsic limits. Future mm-wave and THz technology requires highly efficient and linear amplifiers that can deliver high power density. This presentation will outline the potential and recent work of next-generation wide band gap transistors based on ultra-wide band gap semiconductors for high frequency applications. Detailed DC and high frequency 2-dimensional modeling of ultra-wide band gap semiconductor devices show that the predicted power density, gain, and efficiency of these devices have the potential to be better than cutting-edge GaN-based devices at mm-wave and THz frequencies. We will discuss the principal challenges for realization of these devices and outline the design and demonstration of advanced high Al-composition AlGaN based transistors, where researchers have used novel epitaxial designs to enable efficient injection and extraction of carriers. This has enabled the state-of-the-art current density and breakdown characteristics of AlGaN-channel devices to increase significantly in recent years.
{"title":"Ultra-wide band gap materials for high frequency applications","authors":"T. Razzak, H. Xue, Zhanbo Xia, Seongmo Hwang, Asif Khan, W. Lu, S. Rajan","doi":"10.1109/IMWS-AMP.2018.8457144","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457144","url":null,"abstract":"Gallium Nitride electronics based on the AlGaN/GaN high electron mobility transistor structure is approaching intrinsic limits. Future mm-wave and THz technology requires highly efficient and linear amplifiers that can deliver high power density. This presentation will outline the potential and recent work of next-generation wide band gap transistors based on ultra-wide band gap semiconductors for high frequency applications. Detailed DC and high frequency 2-dimensional modeling of ultra-wide band gap semiconductor devices show that the predicted power density, gain, and efficiency of these devices have the potential to be better than cutting-edge GaN-based devices at mm-wave and THz frequencies. We will discuss the principal challenges for realization of these devices and outline the design and demonstration of advanced high Al-composition AlGaN based transistors, where researchers have used novel epitaxial designs to enable efficient injection and extraction of carriers. This has enabled the state-of-the-art current density and breakdown characteristics of AlGaN-channel devices to increase significantly in recent years.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"38 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90588668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457127
C. Tomassoni, G. Venanzoni, M. Dionigi, R. Sorrentino
A novel very compact structure is proposed to realize a doublet capable of both symmetric and asymmetric filtering functions for rectangular waveguide filters. The structure consists of two slanting rods connected to a metal septum with a double-iris. This structure is capable of two pole and two transmission zeroes (TZs) that can be positioned both in the upper stop band or one in the lower and the other in the upper stopband. The positions of the TZs can be easily controlled.The proposed structure has a non-conventional geometry that can be effectively fabricated by additive manufacturing techniques. Several doublet structures have been manufactured by Stereolithography (SLA) and measured demonstrating the feasibility of the proposed geometry.
{"title":"Additive Manufacturing of a Very Compact Doublet Structure with Asymmetric Filtering Function","authors":"C. Tomassoni, G. Venanzoni, M. Dionigi, R. Sorrentino","doi":"10.1109/IMWS-AMP.2018.8457127","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457127","url":null,"abstract":"A novel very compact structure is proposed to realize a doublet capable of both symmetric and asymmetric filtering functions for rectangular waveguide filters. The structure consists of two slanting rods connected to a metal septum with a double-iris. This structure is capable of two pole and two transmission zeroes (TZs) that can be positioned both in the upper stop band or one in the lower and the other in the upper stopband. The positions of the TZs can be easily controlled.The proposed structure has a non-conventional geometry that can be effectively fabricated by additive manufacturing techniques. Several doublet structures have been manufactured by Stereolithography (SLA) and measured demonstrating the feasibility of the proposed geometry.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"2 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89095435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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