Microwave III-V semiconductors for telecommunications and prospective of the III-V industry

Abstract

The microwave III-V semiconductor IC technology (primarily GaAs) has emerged as a powerful enabling technology for wireless and optical communications in the past 5 years. It has been dominating, or making substantial penetration into, the market for handset power amplifiers and switches, advanced wireless LAN RF front-ends and various other key RF components for broadband wireless, wireless infrastructure, satellite telecommunications, high data rate fiber optical communications and automotive radar applications. The microwave III-V semiconductor IC industry has grown dramatically in the past 2-3 years. It is worth noting that the majority of the recently formed GaAs fabs are located in Taiwan. Their intent is to provide pure-play foundry services following the silicon foundry business model developed by TSMC and UMC. In this presentation, we discuss the key components of III-V microwave transistors (HBT, pHEMT and MESFET etc.) and their RFICs/MMICs, their electrical performance, major applications, market status, trends and opportunities. We define the current status for the global III-V semiconductor industry, the rapidly growing GaAs MMIC fab industry in Taiwan and its advantages for providing a one-stop, total solution for wireless and optical communication components customers.