Investigation of the Effect of Vacuum and Air Annealing on the Structural, Optical and Electrical Properties of Radio Frequency Sputtered WO3 Thin Films

Abstract

Thin films of tungsten oxide were deposited on glass substrates by the radio frequency (RF) reactive sputtering from a high purity tungsten metal target (99.9%) with a diameter of 10 cm. The reactive sputtering was carried out in an argon-oxygen gas mixture containing 20% of O2 and 80% of Ar. The used RF power is 200 W while fixing the deposition time at 120 min. Finally, the prepared films were annealed at different temperatures (350 °C, 400 °C, 450 °C, 500°C and 550 °C) for 1 hour under air and under vacuum. X-ray diffractograms showed that the deposited thin films crystallized in Hexagonal/Monoclinic WO3 phase. It was found that the crystallite size varies with the annealing temperature and the lattice parameters is a= 7.3064Å, b = 7.5292Å, c = 7.6875Å and a=b= 7.3242Å, c= 7.6624 Å, for h-WO3 and m-WO3 structures, respectively. Scanning Electron Microscopy (SEM), Raman spectra confirmed the formation of WO3 thin films. In addition, optical transmittance data revealed that the optical bandgap of the films decreases with increasing the annealing temperature. Electrical measurements revealed that annealing in air results in more resistive samples, which should be taken into account in future investigations, especially as buffer layers for efficient photovoltaic solar cells. Keywords: Vacuum, Tungsten oxide, Raman spectroscopy, RF Sputtering method, RF Power, Annealing temperature.