T. Otsuji, M. Hanabe, J. Shigenobu, S. Takahashi, E. Sano
{"title":"A novel terahertz plasma-wave photomixer with resonant-cavity enhanced structure","authors":"T. Otsuji, M. Hanabe, J. Shigenobu, S. Takahashi, E. Sano","doi":"10.1109/ICIMW.2004.1422093","DOIUrl":null,"url":null,"abstract":"Two-dimensional (2D) plasmon in a submicron transistor channel can make resonant oscillation in the terahertz range. We propose a novel terahertz plasma-wave photomixer that can improve the conversion gain and terahertz radiation power. The photomixer is based on a high-electron mobility transistor (HEMT) and incorporates doubly interdigitated grating strips for the gate electrodes that periodically localize the 2D plasmons in sub 100-nm regions with a micron-order interval. A vertical cavity structure is formed in between the top metal grating and a terahertz mirror placed at the backside. FDTD simulation demonstrates that a newly-introduced vertical cavity structure effectively enhances the conversion gain and radiation power.","PeriodicalId":13627,"journal":{"name":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2004-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIMW.2004.1422093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Two-dimensional (2D) plasmon in a submicron transistor channel can make resonant oscillation in the terahertz range. We propose a novel terahertz plasma-wave photomixer that can improve the conversion gain and terahertz radiation power. The photomixer is based on a high-electron mobility transistor (HEMT) and incorporates doubly interdigitated grating strips for the gate electrodes that periodically localize the 2D plasmons in sub 100-nm regions with a micron-order interval. A vertical cavity structure is formed in between the top metal grating and a terahertz mirror placed at the backside. FDTD simulation demonstrates that a newly-introduced vertical cavity structure effectively enhances the conversion gain and radiation power.