Nanoscale analysis of the cross-sectional structure and composition of ZnO: Al active channel layer in thin film transistors

Abstract

High spatial and analytical resolution HR SEM-EDX and STEM-EDX microscopy techniques were applied for characterization of thin films transistors (TFT) with ZnO: Al active channel layer. The structure and chemical composition of thin films and their interfaces were investigated at the nanometer scale using cross section samples from TFT devices. We evidenced that cross sectional chemical elements spectra and elemental mapping are very powerful tools for analysis of chemical elements distribution in the films and at the interfaces.