{"title":"Exploration of poly Irms based on 40nm technology node","authors":"Xiangfu Zhao, W. Chien, Kelly Yang","doi":"10.1109/CSTIC.2017.7919849","DOIUrl":null,"url":null,"abstract":"The Root Mean Square current (Irms) has been explored on both N doped un-silicided poly and silicided poly at 40nm technology node. It is found that poly resistance-current (RI) curves show an initially high resistance due to Schottky Rectifying contact. However, poly Irms can be estimated similar to metal Irms. Parameters for poly Irms calculation is provided on the basis of 5°C Joule heating.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"1 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The Root Mean Square current (Irms) has been explored on both N doped un-silicided poly and silicided poly at 40nm technology node. It is found that poly resistance-current (RI) curves show an initially high resistance due to Schottky Rectifying contact. However, poly Irms can be estimated similar to metal Irms. Parameters for poly Irms calculation is provided on the basis of 5°C Joule heating.
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