Extending the viability of I/sub DDQ/ testing in the deep submicron era

Y. Tsiatouhas, T. Haniotakis, D. Nikolos, A. Arapoyanni
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引用次数: 9

Abstract

I/sub DDQ/ testing has become a widely accepted defect detection technique in CMOS ICs. However, its effectiveness in deep submicron is threatened by the increased transistor sub-threshold leakage current. In this paper, a new I/sub DDQ/ testing scheme is proposed. This scheme is based on the elimination, during I/sub DDQ/ testing, of the normal leakage current from the sensing node of the circuit under test so that already known in the open literature I/sub DDQ/ sensing techniques can be applied in deep submicron.
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扩展深亚微米时代I/sub DDQ/测试的可行性
I/sub DDQ/测试已成为CMOS集成电路中被广泛接受的缺陷检测技术。然而,其在深亚微米的有效性受到晶体管亚阈值泄漏电流增大的威胁。本文提出了一种新的I/sub DDQ/测试方案。该方案基于在I/sub DDQ/测试过程中消除被测电路传感节点的正常泄漏电流,从而使公开文献中已知的I/sub DDQ/传感技术可以应用于深亚微米。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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