Study of piezoelectrycity in structures based on nanofibrous ZnO layers and polysilane

L. Ghimpu, V. Cojocaru, M. Soroceanu, L. Săcărescu, A. Katashev, V. Harabagiu, I. Tiginyanu
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Abstract

Zinc oxide films were deposited by method rf magnetron sputtering in a mixed environment of oxygen and argon on two types of substrates, glass and silicon substrates with different orientations, by varying the deposition parameters in order to obtain high-quality ZnO nanostructured layers. An atomic force microscope was used to measure the piezoelectricity in nanofibrous layers and poly [methyl (H) silane]. The interaction between the type of semiconductor/poly[methyl(H)silane] and the applied electric field has proved that the given structures are piezoelectric materials useful for fabrication of optoelectronic devices.
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基于纳米纤维ZnO层和聚硅烷结构的压电性研究
采用射频磁控溅射的方法,在氧气和氩气混合环境下,在不同取向的玻璃基片和硅基片上沉积氧化锌薄膜,通过改变沉积参数,获得高质量的氧化锌纳米结构层。利用原子力显微镜测量了纳米纤维层和聚甲基硅烷的压电性。半导体/聚[甲基(H)硅烷]类型与外加电场之间的相互作用证明了给定结构是可用于制造光电器件的压电材料。
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