L. Ghimpu, V. Cojocaru, M. Soroceanu, L. Săcărescu, A. Katashev, V. Harabagiu, I. Tiginyanu
{"title":"Study of piezoelectrycity in structures based on nanofibrous ZnO layers and polysilane","authors":"L. Ghimpu, V. Cojocaru, M. Soroceanu, L. Săcărescu, A. Katashev, V. Harabagiu, I. Tiginyanu","doi":"10.1109/SMICND.2012.6400780","DOIUrl":null,"url":null,"abstract":"Zinc oxide films were deposited by method rf magnetron sputtering in a mixed environment of oxygen and argon on two types of substrates, glass and silicon substrates with different orientations, by varying the deposition parameters in order to obtain high-quality ZnO nanostructured layers. An atomic force microscope was used to measure the piezoelectricity in nanofibrous layers and poly [methyl (H) silane]. The interaction between the type of semiconductor/poly[methyl(H)silane] and the applied electric field has proved that the given structures are piezoelectric materials useful for fabrication of optoelectronic devices.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"120 1","pages":"295-298"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400780","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Zinc oxide films were deposited by method rf magnetron sputtering in a mixed environment of oxygen and argon on two types of substrates, glass and silicon substrates with different orientations, by varying the deposition parameters in order to obtain high-quality ZnO nanostructured layers. An atomic force microscope was used to measure the piezoelectricity in nanofibrous layers and poly [methyl (H) silane]. The interaction between the type of semiconductor/poly[methyl(H)silane] and the applied electric field has proved that the given structures are piezoelectric materials useful for fabrication of optoelectronic devices.