The conductive heterojunctuon device of graphene and MoS2

Abstract

This paper reports the estimation of graphene thickness, done by the intensity ratio of the 2D band to the G band and the ration is found to be 1.91 which suggests, it is monolayer and bilayer MoS2. The RAMAN spectra shows presence of crystalline defects, considering high D/G ratio. The heterostructure device synthesized shows linear conductivity, making it a conductive device. These devices exhibit a promising device for a new generation of transparent, high performance, high response gas sensors and optoelectronic devices. The heterostructure device of graphene and MoS2 show promise for enhanced performance in photo detectors and phototransistors; with electrostatic coupling and high current capacity. This synthesis approach is used to fabricate a MoS2/Graphene on copper foil by growing large scale uniform MoS2 on graphene.