Current controlled magnetic memory based on hysteretic switching of impedance in conductor with inclined anisotropy easy axis

Abstract

Here we propose a principle of a current controlled magnetic memory device based on magnetoimpedance (MI) effect in a conductor with inclined anisotropy easy axis. It was demonstrated that the surface magnetization can be switched controllably between two stable states by applying current pulses, and the magnetization state can be detected by sensing the impedance.