{"title":"Effect of constriction width on hysteresis in superconducting weak links and micro-SQUIDs","authors":"N. Kumar, Bharat K. Gupta, Anjan K. Gupta","doi":"10.1063/5.0062494","DOIUrl":null,"url":null,"abstract":"We have fabricated and characterized niobium film based superconducting weak link (WL) devices and micron-size superconducting quantum interference devices (μ-SQUIDs) with superconducting WLs as Josephson Junctions. Here we discuss the effect of WL width on the hysteresis and crossover temperature (Th) while keeping the other dimensions fixed. We find that the critical current reduces linearly with the width and thus Th reduces with decreasing width. This makes some of the devices non-hysteretic down to 1.3K.We also discuss the observed excess current in the current-voltage characteristics of these devices, in terms of Andreev reflection.","PeriodicalId":18837,"journal":{"name":"NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM2020","volume":"40 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM2020","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/5.0062494","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have fabricated and characterized niobium film based superconducting weak link (WL) devices and micron-size superconducting quantum interference devices (μ-SQUIDs) with superconducting WLs as Josephson Junctions. Here we discuss the effect of WL width on the hysteresis and crossover temperature (Th) while keeping the other dimensions fixed. We find that the critical current reduces linearly with the width and thus Th reduces with decreasing width. This makes some of the devices non-hysteretic down to 1.3K.We also discuss the observed excess current in the current-voltage characteristics of these devices, in terms of Andreev reflection.
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