A novel dual-frequency terahertz antenna in standard CMOS technology

Jingyu Peng, X. Ji, Xingxing Zhang, Y. Liao, Feng Yan
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引用次数: 1

Abstract

A dual-frequency antenna resonated at 0.32 THz and 0.65 THz has been analyzed and simulated for CMOS THz imaging and sensing systems. It includes the two rectified bowtie structures designed at metal and poly-Si layers in standard CMOS technology. Simulation results show that the antenna has the high gain and radiation efficiency and a great impedance matching comparing to the conventional metal dual-band antenna. The demonstrated design opens a brand new way for ease realization of multi-band on-chip THz antenna in CMOS technologies.
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一种采用标准CMOS技术的新型双频太赫兹天线
分析和仿真了一种用于CMOS太赫兹成像和传感系统的谐振频率分别为0.32和0.65太赫兹的双频天线。它包括两个整流领结结构设计在金属和多晶硅层在标准的CMOS技术。仿真结果表明,与传统金属双频天线相比,该天线具有较高的增益和辐射效率,阻抗匹配性好。所演示的设计为在CMOS技术中实现多频段片上太赫兹天线开辟了一条全新的途径。
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