Measurement Of Total Absorption Area Of Electronic Subassemblies

Abstract

Methodologies are described for measuring the total absorption area of electronic subassemblies. In the first approach the subassembly is placed inside a large high-Q test enclosure, and the total absorption area of the subassembly is calculated from the measured reduction in Q-value of the test enclosure. This non-invasive method does not require the placement of field probes inside the subassembly. In the second approach, which is invasive, the total absorption area of the subassembly is calculated from the values of shielding effectiveness and Q of the subassembly that are measured by means of probes placed inside the subassembly. Experimental data are presented for the 1.0 to 6.0 GHz region.