J. Kamioka, M. Hangai, S. Miwa, Y. Kamo, S. Shinjo
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引用次数: 0
Abstract
This paper reports on a wideband Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) high power amplifiers (HPAs) operated in S to X bands. Two band-pass non-uniform distributed power amplifiers (NDPAs) are designed to obtain wideband and high power characteristics. One is a single-ended HPA which demonstrates output power of 17 to 26 W, power added efficiency (PAE) of 24 to 44% across 2.5 to 11.0 GHz with chip size of 4.2 mm2. The other is a two-way combined HPA which demonstrates output power of 27 to 61 W, PAE of 24 to 43% across 2.5 to 10.0 GHz with chip size of 9.6 mm2.
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