Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224046
Te-Yen Chiu, Yu-Ling Lee, Chun-Lin Ko, S. Tseng, Chun-Hsing Li
An interconnect for THz heterogeneous integration is proposed in this work. Two transmission lines deployed on a 40-nm CMOS chip and an IPD carrier, respectively, are coupled together to form a Marchand balun during a flip-chip packaging process. By doing this, the proposed interconnect can provide packaging and balun functions simultaneously. Two interconnects using the proposed idea are demonstrated with measured and simulated insertion loss of 0.9 and 1.4 dB at 169 and 340 GHz, respectively.
{"title":"A Low-Loss Balun-Embedded Interconnect for THz Heterogeneous System Integration","authors":"Te-Yen Chiu, Yu-Ling Lee, Chun-Lin Ko, S. Tseng, Chun-Hsing Li","doi":"10.1109/IMS30576.2020.9224046","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224046","url":null,"abstract":"An interconnect for THz heterogeneous integration is proposed in this work. Two transmission lines deployed on a 40-nm CMOS chip and an IPD carrier, respectively, are coupled together to form a Marchand balun during a flip-chip packaging process. By doing this, the proposed interconnect can provide packaging and balun functions simultaneously. Two interconnects using the proposed idea are demonstrated with measured and simulated insertion loss of 0.9 and 1.4 dB at 169 and 340 GHz, respectively.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"31 1","pages":"1043-1046"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74102308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224075
Ting Lu, J. Schneider, Xiating Zou, Sidhant Tiwari, Z. Yao, G. Carman, R. Candler, Y. Wang
In this paper we explore parametric amplification on the Lamb wave acoustic platform for the purpose of developing nonlinear and non-reciprocal devices. The strength of the acoustic wave platform over the electromagnetic platform is its low loss and short wavelength at radio frequency which enables devices with a small footprint and high quality factor. Compared to surface acoustic waves, Lamb waves exhibit much higher phase velocity which support higher frequency operation with fabrication tolerance. To realize parametric amplification, the intrinsic nonlinear stiffness of aluminum nitride is used to couple acoustic waves at different frequencies. Novel Lamb wave resonator structures and non-reciprocal devices implementation have been proven in theory and simulation. Experiment of Lamb wave transducers demonstrates parametric effects and proves nonlinearity in AlN thin films.
{"title":"Lamb Wave Resonator Loaded Non-reciprocal RF Devices","authors":"Ting Lu, J. Schneider, Xiating Zou, Sidhant Tiwari, Z. Yao, G. Carman, R. Candler, Y. Wang","doi":"10.1109/IMS30576.2020.9224075","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224075","url":null,"abstract":"In this paper we explore parametric amplification on the Lamb wave acoustic platform for the purpose of developing nonlinear and non-reciprocal devices. The strength of the acoustic wave platform over the electromagnetic platform is its low loss and short wavelength at radio frequency which enables devices with a small footprint and high quality factor. Compared to surface acoustic waves, Lamb waves exhibit much higher phase velocity which support higher frequency operation with fabrication tolerance. To realize parametric amplification, the intrinsic nonlinear stiffness of aluminum nitride is used to couple acoustic waves at different frequencies. Novel Lamb wave resonator structures and non-reciprocal devices implementation have been proven in theory and simulation. Experiment of Lamb wave transducers demonstrates parametric effects and proves nonlinearity in AlN thin films.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"47 1","pages":"516-519"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74154925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224081
D. Turan, N. Yardimci, P. Lu, M. Jarrahi
We demonstrate a broadband and highly reliable photoconductive terahertz emitter based on plasmonic nanoantennas that operates at telecommunication optical wavelengths (~1550 nm) at which low-cost and compact lasers are commercially available. The photoconductive substrate is specifically grown to induce a built-in electric field at the interface between the nanoantennas and photoconductive substrate. This built-in electric field drifts the photocarriers generated by the optical pump beam and produces the terahertz feed current to the nanoantennas while eliminating the need for an external bias voltage. The bias-free operation suppresses the dark current that is detrimental to the photoconductive emitters that operate at telecommunication optical wavelengths. Despite their great promise, the bandwidth of previously demonstrated bias-free photoconductive terahertz emitters has been limited by the limited extent of the built-in electric field in the photoconductive substrate. Here we present a telecommunication-compatible, bias-free photoconductive terahertz emitter that offers more than a 5 THz radiation bandwidth and a 100 dB dynamic range.
{"title":"Terahertz Generation through Bias-free Telecommunication Compatible Photoconductive Nanoantennas over a 5 THz Radiation Bandwidth","authors":"D. Turan, N. Yardimci, P. Lu, M. Jarrahi","doi":"10.1109/IMS30576.2020.9224081","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224081","url":null,"abstract":"We demonstrate a broadband and highly reliable photoconductive terahertz emitter based on plasmonic nanoantennas that operates at telecommunication optical wavelengths (~1550 nm) at which low-cost and compact lasers are commercially available. The photoconductive substrate is specifically grown to induce a built-in electric field at the interface between the nanoantennas and photoconductive substrate. This built-in electric field drifts the photocarriers generated by the optical pump beam and produces the terahertz feed current to the nanoantennas while eliminating the need for an external bias voltage. The bias-free operation suppresses the dark current that is detrimental to the photoconductive emitters that operate at telecommunication optical wavelengths. Despite their great promise, the bandwidth of previously demonstrated bias-free photoconductive terahertz emitters has been limited by the limited extent of the built-in electric field in the photoconductive substrate. Here we present a telecommunication-compatible, bias-free photoconductive terahertz emitter that offers more than a 5 THz radiation bandwidth and a 100 dB dynamic range.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"16 1","pages":"87-90"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75195564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223774
T. Sharma, Zheng Liu, C. R. Chappidi, H. Saeidi, S. Venkatesh, K. Sengupta
High-efficiency and broadband power amplifiers (PAs) are key to enabling the next-generation of millimeter-Wave (mm-Wave) systems and multi-functional communication, sensing and imaging arrays. Due to the low $f/f_{max}$, low breakdown voltages and low gain in silicon devices at mm-Wave frequencies, InP HBTs have been promising candidates to enable high-efficiency, high power and broadband transmitter frontends for compact phased and MIMO arrays above 50 GHz. In this paper, we present two broadband PA architectures covering 50–70 GHz, and 64–110 GHz in 250 nm InP HBT process through specially designed asymmetrical power combining architectures with stacked PA cells. The PAs generate more than 20 dBm of peak power in both the bands with peak output collector efficiency (ηout) exceeding 40%, total collector efficiency (η) exceeding 30% and peak power added efficiency (PAE) >23 % for both bands. This work presents one of the highest bandwidth and highest efficiency PAs with peak power greater than 20 dBm.
{"title":"Broadband PA Architectures with Asymmetrical Combining and Stacked PA cells across 50-70 GHz and 64-110 GHz in 250 nm InP","authors":"T. Sharma, Zheng Liu, C. R. Chappidi, H. Saeidi, S. Venkatesh, K. Sengupta","doi":"10.1109/IMS30576.2020.9223774","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223774","url":null,"abstract":"High-efficiency and broadband power amplifiers (PAs) are key to enabling the next-generation of millimeter-Wave (mm-Wave) systems and multi-functional communication, sensing and imaging arrays. Due to the low $f/f_{max}$, low breakdown voltages and low gain in silicon devices at mm-Wave frequencies, InP HBTs have been promising candidates to enable high-efficiency, high power and broadband transmitter frontends for compact phased and MIMO arrays above 50 GHz. In this paper, we present two broadband PA architectures covering 50–70 GHz, and 64–110 GHz in 250 nm InP HBT process through specially designed asymmetrical power combining architectures with stacked PA cells. The PAs generate more than 20 dBm of peak power in both the bands with peak output collector efficiency (ηout) exceeding 40%, total collector efficiency (η) exceeding 30% and peak power added efficiency (PAE) >23 % for both bands. This work presents one of the highest bandwidth and highest efficiency PAs with peak power greater than 20 dBm.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"61 1","pages":"405-408"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75295631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223996
Hailun Wu, M. Ravan, Raveena Sharma, Jay Patel, R. Amineh
Recently, non-metallic materials which are resilient- to-corrosion, low cost, and light weight have been exploited in many industrial sectors. A common application of them is in the form of pipes. Due to the fact that the traditional NDT methods are mostly effective for metallic pipes, here, a microwave holographic imaging combined with standardized minimum norm (SMN) is proposed for inspection of multiple concentric nonmetallic pipes. To reduce the complexity of the system, we aim at using the narrowest possible frequency band by using an array of receiver antennas. The validity of the proposed imaging method is demonstrated via simulation and experimental results.
{"title":"Non-Destructive Testing of Non-Metallic Concentric Pipes Using Microwave Measurements","authors":"Hailun Wu, M. Ravan, Raveena Sharma, Jay Patel, R. Amineh","doi":"10.1109/IMS30576.2020.9223996","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223996","url":null,"abstract":"Recently, non-metallic materials which are resilient- to-corrosion, low cost, and light weight have been exploited in many industrial sectors. A common application of them is in the form of pipes. Due to the fact that the traditional NDT methods are mostly effective for metallic pipes, here, a microwave holographic imaging combined with standardized minimum norm (SMN) is proposed for inspection of multiple concentric nonmetallic pipes. To reduce the complexity of the system, we aim at using the narrowest possible frequency band by using an array of receiver antennas. The validity of the proposed imaging method is demonstrated via simulation and experimental results.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"70 1","pages":"369-372"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75317761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223970
Eric Kwiatkowski, C. Rodenbeck, T. Barton, Z. Popovic
This work presents an RF power-combined rectenna array operating at 10 GHz and designed for low incident power densities ranging from 0.1-100 µW/cm2. The array consists of unit-cell sequentially-fed four-element patch antenna subarrays designed to receive incident waves with circular polarization. The incident power is converted to dc using a single-ended Schottky diode rectifier. The rectifier is first characterized over input power and dc load individually and with a single sub-array. A 4-to-1 RF power-combining network is designed to further improve RF-to-dc conversion efficiency and output power at the lower-bound power density of 0.1 µW/cm2. A three-layer PCB with off-the-shelf components enables straightforward scaling to larger apertures.
{"title":"Power-Combined Rectenna Array for X-Band Wireless Power Transfer","authors":"Eric Kwiatkowski, C. Rodenbeck, T. Barton, Z. Popovic","doi":"10.1109/IMS30576.2020.9223970","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223970","url":null,"abstract":"This work presents an RF power-combined rectenna array operating at 10 GHz and designed for low incident power densities ranging from 0.1-100 µW/cm2. The array consists of unit-cell sequentially-fed four-element patch antenna subarrays designed to receive incident waves with circular polarization. The incident power is converted to dc using a single-ended Schottky diode rectifier. The rectifier is first characterized over input power and dc load individually and with a single sub-array. A 4-to-1 RF power-combining network is designed to further improve RF-to-dc conversion efficiency and output power at the lower-bound power density of 0.1 µW/cm2. A three-layer PCB with off-the-shelf components enables straightforward scaling to larger apertures.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"52 1","pages":"992-995"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74574400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223974
Y. Niida, Masaru Sato, M. Nishimori, T. Ohki, N. Nakamura
We fabricated a wideband gallium nitride (GaN) power amplifier (PA) using a power combiner with impedance transformation function. We designed a four-way planar impedance transformer power combiner based on the transmission line transformer (TLT) technique. The fabricated PA exhibited an average output power (Pout) of 233 W, average power-added-efficiency (PAE) of 42 %, and average drain efficiency (η) of 47% in the frequency range of 0.5 GHz to 2.1 GHz. The fabricated P A exhibits a wider fractional bandwidth (FBW) than a reported P A with an output power of over 200 W.
{"title":"An over 230 W, 0.5–2.1 GHz Wideband GaN Power Amplifier using Transmission-Line-Transformer-Based Combining Technique","authors":"Y. Niida, Masaru Sato, M. Nishimori, T. Ohki, N. Nakamura","doi":"10.1109/IMS30576.2020.9223974","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223974","url":null,"abstract":"We fabricated a wideband gallium nitride (GaN) power amplifier (PA) using a power combiner with impedance transformation function. We designed a four-way planar impedance transformer power combiner based on the transmission line transformer (TLT) technique. The fabricated PA exhibited an average output power (Pout) of 233 W, average power-added-efficiency (PAE) of 42 %, and average drain efficiency (η) of 47% in the frequency range of 0.5 GHz to 2.1 GHz. The fabricated P A exhibits a wider fractional bandwidth (FBW) than a reported P A with an output power of over 200 W.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"51 1","pages":"25-28"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78233183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223808
R. Giofré, F. Costanzo, A. Massari, A. Suriani, F. Vitulli, E. Limiti
This contribution presents a Q-band Solid State Power Amplifier (SSPA) developed by Thales Alenia Space in Italy for next generation High Throughput Satellite (HTS). The Radio Frequency Tray (RFT) is composed by the cascade of a channel amplifier, a linearizer and a high power section. The first two sub-units are built with mainly Gallium Arsenide components, whereas the latter combines sixteen elementary MMICs Power Amplifiers (PAs), designed ad-hoc on a commercial 100 nm gate length Gallium Nitride on Silicon (GaN-Si) process, in WR-22 waveguide structure. Sizes and weight of a first prototype of the SSPA discussed in this paper are [45x22x7.2] (LxWxH) cm3and 5.5 Kg, respectively, including the WR-22 waveguide input and output isolators. A version with reduced mass (3.5 kg) and size [29.5x21.0x5.5] (LxWxH) cm3is under test at the time of writing and results will be presented at the conference. In the overall Q-band downlink range (i.e., from 37.5 to 42.5GHz) the SSPA delivers more than 20 W of output power with an associated Noise to Power Ratio and power added efficiency better than 18 dB and 15 %, respectively, whereas the gain can be varied from 60 dB to 100 dB through telecommand. To the best of the authors' knowledge, this is the first realization of a 20 W SSPA in Q-band for space applications, at least in Europe.
{"title":"A 20 W GaN-on-Si Solid State Power Amplifier for Q-band Space Communication Systems","authors":"R. Giofré, F. Costanzo, A. Massari, A. Suriani, F. Vitulli, E. Limiti","doi":"10.1109/IMS30576.2020.9223808","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223808","url":null,"abstract":"This contribution presents a Q-band Solid State Power Amplifier (SSPA) developed by Thales Alenia Space in Italy for next generation High Throughput Satellite (HTS). The Radio Frequency Tray (RFT) is composed by the cascade of a channel amplifier, a linearizer and a high power section. The first two sub-units are built with mainly Gallium Arsenide components, whereas the latter combines sixteen elementary MMICs Power Amplifiers (PAs), designed ad-hoc on a commercial 100 nm gate length Gallium Nitride on Silicon (GaN-Si) process, in WR-22 waveguide structure. Sizes and weight of a first prototype of the SSPA discussed in this paper are [45x22x7.2] (LxWxH) cm3and 5.5 Kg, respectively, including the WR-22 waveguide input and output isolators. A version with reduced mass (3.5 kg) and size [29.5x21.0x5.5] (LxWxH) cm3is under test at the time of writing and results will be presented at the conference. In the overall Q-band downlink range (i.e., from 37.5 to 42.5GHz) the SSPA delivers more than 20 W of output power with an associated Noise to Power Ratio and power added efficiency better than 18 dB and 15 %, respectively, whereas the gain can be varied from 60 dB to 100 dB through telecommand. To the best of the authors' knowledge, this is the first realization of a 20 W SSPA in Q-band for space applications, at least in Europe.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"14 1","pages":"413-415"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79143959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223860
Xiaolin Fan, Song Li, P. Laforge, Q. Cheng
An automated EM-based method for efficient spiral inductor design is proposed and implemented using Matlab-driven Sonnet em simulator. In the proposed method, a surrogate model is established as a replacement to the computational expensive EM model utilizing a one-step calibrated circuit model and an iterative response correction process. In the design procedure, only one parameter extraction is performed prior to the iterative response correction in which no further parameter extraction is required. A hexdecagon spiral inductor is designed and optimized automatically following the proposed procedure, the algorithm convergent within 4 iterations to satisfy design specifications. A comparison between the fine model and updated surrogate model is also given as a validation to the reliability of the proposed method.
{"title":"Automated Spiral Inductor Design by a Calibrated PI Network with Manifold Mapping Technique","authors":"Xiaolin Fan, Song Li, P. Laforge, Q. Cheng","doi":"10.1109/IMS30576.2020.9223860","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223860","url":null,"abstract":"An automated EM-based method for efficient spiral inductor design is proposed and implemented using Matlab-driven Sonnet em simulator. In the proposed method, a surrogate model is established as a replacement to the computational expensive EM model utilizing a one-step calibrated circuit model and an iterative response correction process. In the design procedure, only one parameter extraction is performed prior to the iterative response correction in which no further parameter extraction is required. A hexdecagon spiral inductor is designed and optimized automatically following the proposed procedure, the algorithm convergent within 4 iterations to satisfy design specifications. A comparison between the fine model and updated surrogate model is also given as a validation to the reliability of the proposed method.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"2 1","pages":"76-79"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85590752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents the design and the measured results of a monolithic microwave integrated circuit (MMIC) T/R front-end module (FEM) suitable for S band to Ku band applications, using a 0.1µm GaN HEMT process. For the first time, the design successfully integrated a 3-stacked non-uniform distributed power amplifier (SNDPA), a two-stage 2-stacked low noise amplifier (LNA) and a T/R switch in one MMIC, to obtain the ultra-broadband power response in Tx mode and low-noise low-consumption performance in Rx mode, simultaneously. Measured results of the MMIC T/R FEM across the 2 to 18 GHz band show that a noise figure (NF) lower than 3.5 dB and a gain better than 18 dB in Rx mode. Meanwhile, about 39 dBm output power at least 16.5 ± 2 dB small-signal gain and average 20% power add efficiency (PAE) have been achieved in Tx mode. The chip occupies a die area of 2.5 × 3.2 mm2. To the best of the authors' knowledge, this work reports the first T/R MMIC FEM which covers the frequency range of 2 to 18 GHz and achieves about 8 W output power and lower than 3.5 dB NF with the smallest die size among all published chips to date.
{"title":"A Compact Ultra-broadband GaN MMIC T/R Front-End Module","authors":"Q. Lin, Haifeng Wu, Yijun Chen, Liu-lin Hu, Shanji Chen, Xiao-Ming Zhang","doi":"10.1109/IMS30576.2020.9223795","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223795","url":null,"abstract":"This paper presents the design and the measured results of a monolithic microwave integrated circuit (MMIC) T/R front-end module (FEM) suitable for S band to Ku band applications, using a 0.1µm GaN HEMT process. For the first time, the design successfully integrated a 3-stacked non-uniform distributed power amplifier (SNDPA), a two-stage 2-stacked low noise amplifier (LNA) and a T/R switch in one MMIC, to obtain the ultra-broadband power response in Tx mode and low-noise low-consumption performance in Rx mode, simultaneously. Measured results of the MMIC T/R FEM across the 2 to 18 GHz band show that a noise figure (NF) lower than 3.5 dB and a gain better than 18 dB in Rx mode. Meanwhile, about 39 dBm output power at least 16.5 ± 2 dB small-signal gain and average 20% power add efficiency (PAE) have been achieved in Tx mode. The chip occupies a die area of 2.5 × 3.2 mm2. To the best of the authors' knowledge, this work reports the first T/R MMIC FEM which covers the frequency range of 2 to 18 GHz and achieves about 8 W output power and lower than 3.5 dB NF with the smallest die size among all published chips to date.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"53 1","pages":"1231-1234"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85873034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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