{"title":"Challenges and prospects of SDR for mobile phones","authors":"U. Ramacher","doi":"10.1109/ICCD.2007.4601903","DOIUrl":null,"url":null,"abstract":"A nonvolatile semiconductor memory apparatus is provided which comprises a flip-flop circuit formed of a pair of MOS FETs and a pair of MNOS FETs coupled to the bistable output terminals of the flip-flop circuit, respectively. The memory apparatus further has a pair of MOS FETs coupled to have the current paths in parallel with the current paths of the pair of MOS FETs of the flip-flop circuit.","PeriodicalId":6306,"journal":{"name":"2007 25th International Conference on Computer Design","volume":"290 1","pages":"215-215"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 25th International Conference on Computer Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD.2007.4601903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A nonvolatile semiconductor memory apparatus is provided which comprises a flip-flop circuit formed of a pair of MOS FETs and a pair of MNOS FETs coupled to the bistable output terminals of the flip-flop circuit, respectively. The memory apparatus further has a pair of MOS FETs coupled to have the current paths in parallel with the current paths of the pair of MOS FETs of the flip-flop circuit.
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