High power high voltage bias-T for half wave resonators and radio frequency quadrupole couplers.

B. Kaizer, L. Weissman, A. Perry, T. Zchut, I. Fishman, J. Rodnizki, M. Eizenshtat, E. Farber
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引用次数: 1

Abstract

High power high voltage bias-T units capable of delivering up to 100 kW CW RF power at 176 MHz and up to 4 kV DC were developed at the Soreq Nuclear Research Center for the Soreq Applied Research Accelerator Facility linac. Two separate bias-T units with different requirements were designed for the radio frequency quadrupole couplers and the half wave resonator couplers. The purpose of this bias-T is to prevent multipacting phenomena by application of a high voltage DC bias to inner conductors of RF couplers. Underlying design principles, indigenous development, and successful off-line and on-line tests results are presented.
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高功率高压偏置t半波谐振器和射频四极耦合器。
Soreq核研究中心为Soreq应用研究加速器设施直线加速器开发了高功率高压偏置t单元,能够在176 MHz下提供高达100 kW的连续射频功率和高达4 kV的直流功率。针对射频四极耦合器和半波谐振器耦合器分别设计了两个不同要求的偏置- t单元。这种偏置- t的目的是通过对射频耦合器的内导体施加高压直流偏置来防止多重冲击现象。介绍了基本的设计原则、自主开发以及成功的离线和在线测试结果。
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