Temperature behavior of 4H-SIC MOS capacitor used as a gas sensor

R. Pascu, G. Pristavu, M. Badila, G. Brezeanu, F. Draghici, F. Craciunoiu
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引用次数: 9

Abstract

Temperature behavior of 4H-SiC MOS capacitor is investigated. A new layout with several active MOS structures is proposed. Measured C-V characteristics show good thermal stability up to 300 C. The main electrical parameters of the MOS structure have been extracted by measurements on wafer and encapsulated samples.
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用作气体传感器的4H-SIC MOS电容器的温度行为
研究了4H-SiC MOS电容器的温度行为。提出了一种由多个有源MOS结构组成的新型布局。通过对晶片和封装样品的测量,获得了MOS结构的主要电学参数。
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