Dielectric barrier discharge species gain for microelectronic substrate treatment

K. Arshak, I. Guiney, O. Korostynska, E. Forde
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Abstract

Summary form only given. A novel multi-electrode dielectric barrier discharge (DBD) plasma system exhibiting active species gain is examined for the production of ozone gas and hence microelectronic substrate treatment. This species gain is achieved by having four electrode pairs in a vertical arrangement and supplying compressed air to traverse throughout the system. This forces the filamentary striations together through lateral pressure, thus aiding in the formation of an extremely dense plasma. The multi-electrode system operates in an effective feed-forward mechanism to create a denser plasma than reported previously. By increasing the initial conditions for oxygen metastables and radicals, singlet oxygen atoms and other reactive species, the overall density is also increased for successive electrode pairs. Additionally, existing plasma technologies for ozone production require the sample to be treated within the plasma volume. Due to the forced nature of the plasma flow, indirect treatment is possible and all results reported here are based on this. Tests on mica and silicon for the semiconductor industries were performed and compared with existing ozone treatment technologies. Results indicate that sufficient surface chemical changes were in evidence with only 30 seconds of plasma treatment. These were obtained by microscopic analysis using scanning electron microscopy (SEM) and Raman spectroscopy in addition to contact angle/wickability tests. These results compare excellently with standard 45-minute treatments of existing technology indicating that this novel plasma system could be used to produce similar quantities of ozone in roughly 1.1% of the time to standard ozone treatment apparatus. In particular this research has enormous potential in industry due to the high concentration of ozone produced coupled with the prospective in-line set-up of the system. Microelectronic sensors were fabricated from these substrates and functioned in a similar manner to existing sensors, i.e. with almost 45 minutes cut from the manufacture time.
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微电子衬底处理的介质阻挡放电物质增益
只提供摘要形式。研究了一种具有活性物质增益的新型多电极介质阻挡放电(DBD)等离子体系统,用于臭氧气体的产生和微电子衬底处理。这种物种增益是通过在垂直排列中有四个电极对并提供压缩空气来穿越整个系统来实现的。这通过侧向压力迫使丝状条纹聚集在一起,从而有助于形成极其致密的等离子体。多电极系统在一个有效的前馈机制中运行,以产生比以前报道的更密集的等离子体。通过增加氧亚稳态和自由基、单线态氧原子和其他活性物质的初始条件,也增加了连续电极对的总密度。此外,用于臭氧生产的现有等离子体技术要求样品在等离子体体积内进行处理。由于等离子体流动的强迫性质,间接处理是可能的,这里报告的所有结果都是基于此。对半导体工业的云母和硅进行了测试,并与现有的臭氧处理技术进行了比较。结果表明,等离子体处理仅30秒就能产生足够的表面化学变化。这些都是通过使用扫描电子显微镜(SEM)和拉曼光谱进行微观分析以及接触角/可弯曲性测试获得的。这些结果与现有技术的标准45分钟处理进行了极好的比较,表明这种新型等离子体系统可以在大约1.1%的时间内产生与标准臭氧处理设备相似数量的臭氧。特别是这项研究在工业上具有巨大的潜力,因为产生高浓度的臭氧,加上该系统的预期在线设置。微电子传感器是由这些基板制造的,其功能与现有传感器类似,即制造时间缩短了近45分钟。
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