{"title":"Phonon instabilities in a metal on the bain FCC–BCC transformation path","authors":"A. R. Kuznetsov, S. Starikov, V. Sagaradze","doi":"10.17804/2410-9908.2022.6.086-094","DOIUrl":null,"url":null,"abstract":"In this paper, the energy of the Bain path in Al and the instability of phonons during uniaxial compression deformation along <001> are studied ab initio. It is shown that, at a strain of about 15%, dynamic loss of structure stability is observed due to short-wavelength phonons, which thus determine the theoretical strength of Al. Deformation causes shifts along the {111} planes of the initial fcc cell, leading to the formation of stacking faults. A similar formation of stacking faults was observed in [1] in the framework of simulation of compression along the <001> Ni3Al nanoparticle (L12 superstructure based on the fcc structure). The results obtained can be applied to situations in the experiment, when small defect-free regions are deformed, for example, as in nanostructured materials and during nanoindentation.","PeriodicalId":11165,"journal":{"name":"Diagnostics, Resource and Mechanics of materials and structures","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diagnostics, Resource and Mechanics of materials and structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.17804/2410-9908.2022.6.086-094","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the energy of the Bain path in Al and the instability of phonons during uniaxial compression deformation along <001> are studied ab initio. It is shown that, at a strain of about 15%, dynamic loss of structure stability is observed due to short-wavelength phonons, which thus determine the theoretical strength of Al. Deformation causes shifts along the {111} planes of the initial fcc cell, leading to the formation of stacking faults. A similar formation of stacking faults was observed in [1] in the framework of simulation of compression along the <001> Ni3Al nanoparticle (L12 superstructure based on the fcc structure). The results obtained can be applied to situations in the experiment, when small defect-free regions are deformed, for example, as in nanostructured materials and during nanoindentation.