In-situ electrical characterization of Pt/NiO/Pt resistive memory elementary cells during FIB milling: A step towards electrical tomography of nanofilaments

C. Guedj, G. Auvert, E. Martinez
{"title":"In-situ electrical characterization of Pt/NiO/Pt resistive memory elementary cells during FIB milling: A step towards electrical tomography of nanofilaments","authors":"C. Guedj, G. Auvert, E. Martinez","doi":"10.1109/IITC-MAM.2015.7325625","DOIUrl":null,"url":null,"abstract":"Electrical characterization during FIB milling of an elementary Pt/NiO/Pt resistive memory cell is used to localize the conducting channels and to estimate the size and shape of the nanofilament. A good agreement is found with cross sectional high resolution Transmission Electron Microscopy images. This methodology is a potential tool to obtain in-operando electrical tomography of conducting paths with subnanometric spatial resolution.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"38 1","pages":"57-58"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC-MAM.2015.7325625","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Electrical characterization during FIB milling of an elementary Pt/NiO/Pt resistive memory cell is used to localize the conducting channels and to estimate the size and shape of the nanofilament. A good agreement is found with cross sectional high resolution Transmission Electron Microscopy images. This methodology is a potential tool to obtain in-operando electrical tomography of conducting paths with subnanometric spatial resolution.
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在FIB铣削过程中,Pt/NiO/Pt电阻性记忆初级细胞的原位电学表征:迈向纳米细丝电断层扫描的一步
在FIB铣削基本Pt/NiO/Pt电阻性记忆电池时,利用电特性来定位导电通道,并估计纳米丝的尺寸和形状。与高分辨率透射电镜的横断面图像有很好的一致性。这种方法是一种潜在的工具,可以获得亚纳米空间分辨率的导电路径的操作中电断层扫描。
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