Aperture coupled microstrip antenna with extremely low profile

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI:10.1109/IMWS-AMP.2015.7325016

Han Yong, Q. Fang, Fenggang Yan, Lizhong Song, X. Qiao

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Abstract

An extremely low profile (0.022λc, λc is the wavelength of the central frequency) microstrip antenna with two H-shaped serial coupling slots for bandwidth enhancement is proposed in this paper. Compared with one coupling slot, a broader impedance bandwidth is available by employing two serial slots. Two coupling slots resonate at adjacent frequency that expands the antenna impedance bandwidth. The H-shaped slots, which shift the resonant frequency to the relatively lower band, can reduce the coupling slot length. Key parameters of coupling slots are investigated and discussed by resorting to simulation results. Measurements of the antenna prototype agree well with the simulation results which exhibit 6.63% impedance bandwidth (S11<;-10dB) from 1.415GHz to 1.512GHz. The prototype exhibits a peak gain of 5.79 dBi and the 3dB beam width of 56° and 112° in the E- and H-planes, respectively, besides the cross polarization level of -20dB down from the co-polarization.

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极低轮廓的孔径耦合微带天线

本文提出了一种极低轮廓(0.022λc， λc为中心频率波长)的带两个h形串行耦合槽的微带天线，用于增强带宽。与一个耦合槽相比，采用两个串行槽可以获得更宽的阻抗带宽。两个耦合槽在相邻频率共振，扩大了天线阻抗带宽。h型槽将谐振频率移至较低的频带，可以减小耦合槽的长度。结合仿真结果，对耦合槽的关键参数进行了研究和讨论。天线样机的测量结果与仿真结果吻合良好，在1.415GHz至1.512GHz范围内阻抗带宽为6.63% (S11< -10dB)。样机的峰值增益为5.79 dBi, E面和h面波束宽度分别为56°和112°，共极化后的交叉极化电平为- 20db。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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