Capacitive pressure sensors based on MEMS, operating in harsh environments

Y. Hezarjaribi, M. Hamidon, S. Keshmiri, A. Bahadorimehr
{"title":"Capacitive pressure sensors based on MEMS, operating in harsh environments","authors":"Y. Hezarjaribi, M. Hamidon, S. Keshmiri, A. Bahadorimehr","doi":"10.1109/SMELEC.2008.4770304","DOIUrl":null,"url":null,"abstract":"Poly-crystalline silicon carbide (polysic) Micro-electromechanical systems (MEMS) capacitive pressure sensors operating at harsh environments (e.g. high temperature) are proposed because of SiC owing excellent electrical stability, mechanical robustness, and chemical inertness properties. The principle of this paper is, design, simulation. The application of SiC pressure sensors are in a harsh environments such as automotive industries, aerospace, oil/logging equipments, nuclear station, power station. The sensor demonstrated a high temperature sensing capability up to 400degC, the device achieves a linear characteristic response and consists of a circular clamped-edges poly-sic diaphragm suspended over sealed cavity on a silicon carbide substrate. The sensor is operating in touch mode capacitive pressure sensor, The advantages of a touch mode are the robust structure that make the sensor to withstand harsh environment, near linear output, and large over-range protection, operating in wide range of pressure, higher sensitivity than the near linear operation in normal mode, so in this case some of stray capacitance effects can be neglected.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"49 1","pages":"184-187"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2008.4770304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28

Abstract

Poly-crystalline silicon carbide (polysic) Micro-electromechanical systems (MEMS) capacitive pressure sensors operating at harsh environments (e.g. high temperature) are proposed because of SiC owing excellent electrical stability, mechanical robustness, and chemical inertness properties. The principle of this paper is, design, simulation. The application of SiC pressure sensors are in a harsh environments such as automotive industries, aerospace, oil/logging equipments, nuclear station, power station. The sensor demonstrated a high temperature sensing capability up to 400degC, the device achieves a linear characteristic response and consists of a circular clamped-edges poly-sic diaphragm suspended over sealed cavity on a silicon carbide substrate. The sensor is operating in touch mode capacitive pressure sensor, The advantages of a touch mode are the robust structure that make the sensor to withstand harsh environment, near linear output, and large over-range protection, operating in wide range of pressure, higher sensitivity than the near linear operation in normal mode, so in this case some of stray capacitance effects can be neglected.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于MEMS的电容式压力传感器,可在恶劣环境下工作
多晶碳化硅(polysic)微机电系统(MEMS)电容式压力传感器可在恶劣环境(如高温)下工作,因为SiC具有优异的电气稳定性、机械鲁棒性和化学惰性。本文的工作原理是:设计、仿真。SiC压力传感器的应用是在恶劣的环境中,如汽车工业、航空航天、石油/测井设备、核电站、电站等。该传感器具有高达400摄氏度的高温传感能力,该器件实现线性特性响应,由一个圆形夹边聚硅膜片组成,该膜片悬挂在碳化硅衬底上的密封腔上。该传感器是工作在触摸模式下的电容式压力传感器,触摸模式的优点是坚固的结构使传感器能够承受恶劣的环境,近线性输出,并有较大的超量程保护,工作在宽的压力范围内,灵敏度高于正常模式下的近线性工作,因此在这种情况下,一些杂散电容的影响可以忽略不计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Packaged single pole double thru (SPDT) and true time delay lines (TTDL) based on RF MEMS switches Aromatic polyimides for optoelectronic applications Design and optimization of an electrostatic actuated micromirror with isolated bottom electrode on silicon substrate Designing devices for avionics applications and the DO-254 guideline RF NEMS based on carbon nanotubes and graphene
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1