N. Toan, Dong Zhao, N. Inomata, M. Toda, Yunheub Song, T. Ono
{"title":"Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition","authors":"N. Toan, Dong Zhao, N. Inomata, M. Toda, Yunheub Song, T. Ono","doi":"10.1109/TRANSDUCERS.2019.8808313","DOIUrl":null,"url":null,"abstract":"NAND and NOR logical gates based on the electrostatically driven silicon nanoelectromechanical (NEM) switches coated tungsten (W) are designed, fabricated and evaluated. A selectively conformal W deposition on high aspect ratio silicon structures is investigated. Logical gates are successfully fabricated and all their functions have been proved. This work opens the possibility not only for producing the complex mechanical logic systems but also for a way to reducing capacitive gap width.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"17 1","pages":"1709-1711"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2019.8808313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
NAND and NOR logical gates based on the electrostatically driven silicon nanoelectromechanical (NEM) switches coated tungsten (W) are designed, fabricated and evaluated. A selectively conformal W deposition on high aspect ratio silicon structures is investigated. Logical gates are successfully fabricated and all their functions have been proved. This work opens the possibility not only for producing the complex mechanical logic systems but also for a way to reducing capacitive gap width.
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