Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface

Yanan Li, Ziqiao Wang, Run Xiao, Qi Li, Ke Wang, A. Richardella, Jian Wang, N. Samarth
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Abstract

Understanding the superconductivity at the interface of FeSe/SrTiO3 is a problem of great contemporary interest due to the significant increase in critical temperature (Tc) compared to that of bulk FeSe, as well as the possibility of an unconventional pairing mechanism and topological superconductivity. We report a study of the influence of a capping layer on superconductivity in thin films of FeSe grown on SrTiO3 using molecular beam epitaxy. We used in vacuo four-probe electrical resistance measurements and ex situ magneto-transport measurements to examine the effect of three capping layers that provide distinctly different charge transfer into FeSe: compound FeTe, non-metallic Te, and metallic Zr. Our results show that FeTe provides an optimal cap that barely influences the inherent Tc found in pristine FeSe/SrTiO3, while the transfer of holes from a non-metallic Te cap completely suppresses superconductivity and leads to insulating behavior. Finally, we used ex situ magnetoresistance measurements in FeTe-capped FeSe films to extract the angular dependence of the in-plane upper critical magnetic field. Our observations reveal an almost isotropic in-plane upper critical field, providing insight into the symmetry and pairing mechanism of high temperature superconductivity in FeSe.
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封盖层对FeSe/SrTiO3界面超导性的影响及面内各向同性上临界场
了解FeSe/SrTiO3界面的超导性是一个当代非常感兴趣的问题,因为与块体FeSe相比,临界温度(Tc)显着增加,以及非常规配对机制和拓扑超导性的可能性。本文报道了用分子束外延技术研究了封盖层对在SrTiO3上生长的FeSe薄膜超导性的影响。我们使用真空四探针电阻测量和非原位磁输运测量来检查三种封盖层的影响,这三种封盖层提供了截然不同的电荷转移到FeSe:化合物FeTe,非金属Te和金属Zr。我们的研究结果表明,FeTe提供了一个最佳的帽,几乎不影响原始FeSe/SrTiO3中固有的Tc,而从非金属Te帽转移的孔完全抑制了超导性并导致绝缘行为。最后,我们在fte封顶的FeSe薄膜中使用非原位磁阻测量来提取平面内上部临界磁场的角依赖性。我们的观察揭示了一个几乎各向同性的平面内上临界场,为FeSe高温超导的对称性和配对机制提供了见解。
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