Determination of the Terahertz Dielectric Function of the Topological Insulator Bi2Se3

Pascal Strathkötter, A. Stroh, H. Hafez, Wentao Zhang, S. Jerng, S. Chun, D. Turchinovich
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引用次数: 1

Abstract

We investigate the THz conductivity of the topological insulator Bi2Se3, in a systematic study involving samples of different thicknesses. In our analysis we compare the fits of experimental data to two suggested models, describing the electron and phonon contributions: Drude with Fano-modified Lorentzian resonance, and Drude with a two-Lorentzian resonance. Analysis of the fit accuracy suggests that the asymmetric shape of the lattice resonance in Bi2Se3 might arise from the presence of a surface vibrational state, rather than from the electron-phonon Fano interference, as was previously suggested.
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拓扑绝缘体Bi2Se3的太赫兹介电函数的测定
我们研究了拓扑绝缘体Bi2Se3的太赫兹电导率,在一项涉及不同厚度样品的系统研究中。在我们的分析中,我们将实验数据的拟合与描述电子和声子贡献的两种建议模型进行了比较:德鲁德与法诺修正的洛伦兹共振,以及德鲁德与双洛伦兹共振。对拟合精度的分析表明,Bi2Se3中晶格共振的不对称形状可能是由表面振动态的存在引起的,而不是由电子-声子范诺干涉引起的。
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