A terahertz 180° continuous phase shifter based on GaAs diode

Abstract

This paper presents a single-segment phase shifter based on GaAs diode at 220 GHz. In this structure, a phase-shifting unit is inserted into the center of the rectangular waveguide surface. The state of the GaAs diode on the phase shifting unit is controlled by an external voltage. Then the equivalent impedance of the load branch is changed, resulting in phase shift. Finally, within 217.5GHz-225.5GHz, a continuous phase shift of 180° can be achieved, the insertion loss is less than 8.2dB and the phase shift difference between each state is about 22.5°.