W-band metamorphic HEMT with 267 mW output power

Katherine J. Herrick, Kenneth W. Brown, Frederick A. Rose, Colin S. Whelan, J. Kotce, R. Jeffrey, Laroche, Yiwen Zhang, Raytheon
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引用次数: 17

Abstract

This paper reports the highest W-band power output of metamorphic HEMT (MHEMT) technology to date. 267 mW single stage performances at 90 GHz are achieved on a 0.15 micron GaAs-based production line with improved manufacturability over InP HEMT. The single stage circuits presented here are building blocks for future MHEMT power amplifier development.
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输出功率267 mW的w波段变质HEMT
本文报道了迄今为止变质HEMT (MHEMT)技术的最高w波段功率输出。在0.15微米的gaas生产线上实现了90 GHz下267mw的单级性能,其可制造性优于InP HEMT。这里介绍的单级电路是未来MHEMT功率放大器发展的基石。
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