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IEEE MTT-S International Microwave Symposium Digest, 2005.最新文献

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Design of dual-band waveguide transformers 双频波导变压器的设计
Pub Date : 2005-10-31 DOI: 10.1109/MWSYM.2005.1516895
U. Rosenberg, J. Bornemann, S. Amari
This paper presents guidelines for the design of dual-band transformers in both rectangular and ridge waveguide technologies. Four to eight transformer sections are used to satisfy specifications for advanced satellite and terrestrial communications in C-band and Ku-band. Compact designs are obtained by synthesis of wideband components, which are then optimized for dual-band application. Measurements of a Ku-band prototype verify the design approach
本文介绍了矩形波导和脊波导技术中双频变压器的设计指南。采用4至8个变压器段,以满足c波段和ku波段先进卫星和地面通信的规格。通过合成宽带元件获得紧凑的设计,然后针对双频应用进行优化。ku波段原型机的测量验证了该设计方法
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引用次数: 4
A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s 一种50 GHz带宽、40 gbit /s低噪声的变质GaAs HEMT分布式放大器
Pub Date : 2005-08-08 DOI: 10.1109/MAPE.2005.1617838
G. Wolf, H. Happy, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, G. Dambrine
An eight stage distributed amplifier with 12.5 dB /spl plusmn/ 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 /spl mu/m metamorphic GaAs HEMT (MHEMT) technology. The amplifier has a minimum noise figure lower than 2.5 dB in the bandwidth. The group delay variation from 9 to 40 GHz is /spl plusmn/ 7.5 ps and circuit consumption is 0.4 W. Such amplifier has been packaged with a high responsivity photodiode into a fiber pig-tailed module. Eye diagrams measurements demonstrate the successful high-speed operation of the photoreceiver.
一种具有12.5 dB /spl plusmn/ 0.45 dB增益和50 GHz带宽的8级分布式放大器已在商用的0.1 /spl mu/m变质GaAs HEMT (MHEMT)技术中得到验证。该放大器在带宽上的最小噪声系数低于2.5 dB。从9到40 GHz的组延迟变化为/spl plusmn/ 7.5 ps,电路消耗为0.4 W。该放大器已与高响应度光电二极管封装在光纤辫尾模块中。眼图测量证明了光电接收器的成功高速运行。
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引用次数: 9
Session TU3B: Hot Carrier Effects and Mixer Technology 会议TU3B:热载波效应和混频器技术
Pub Date : 2005-06-17 DOI: 10.1109/MTT67880.2005.9387840
Ho Huang, Z. Bardai
Hot carrier effects become an important consideration as device dimensions shrink to address higher frequency of operation. SiGe mixers have increasing importance due to potential for high level of integration and low cost. This session addresses the hot carrier effects in both GaAs and silicon circuits, 5 GHz mixer development, as well as tunable elements and isolation issues for insulating and silicon substrates.
热载流子效应成为重要的考虑因素,因为器件尺寸缩小,以解决更高的工作频率。由于具有高集成度和低成本的潜力,SiGe混频器越来越重要。本次会议将讨论GaAs和硅电路中的热载子效应,5ghz混频器的开发,以及绝缘和硅衬底的可调谐元件和隔离问题。
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引用次数: 0
Session WE1A: Phased Arrays and Retrodirective Systems 会议WE1A:相控阵和反向指示系统
Pub Date : 2005-06-17 DOI: 10.1109/MTT67880.2005.9387803
R. Miyamoto, J. Navarro
Beam-steering systems are advantageous due to the capability of fast steering, and robustness in mobile communications. This session presents recent advances in phased arrays and retrodirective systems.
波束导向系统在移动通信中具有快速导向和鲁棒性等优点。本次会议将介绍相控阵和反向定向系统的最新进展。
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引用次数: 0
Session TU4A: Filter Design and Implementation 会议TU4A:滤波器的设计和实现
Pub Date : 2005-06-17 DOI: 10.1109/MTT67880.2005.9387759
Hui-Wen Yao, J. Modelski
The session presents new ideals and latest progresses in no planar microwave filter design and implementation.
会议介绍了无平面微波滤波器设计和实现的新理念和最新进展。
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引用次数: 0
Technical Program 2005 International Microwave Symposium 技术计划2005国际微波研讨会
Pub Date : 2005-06-17 DOI: 10.1109/MWSYM.2005.1516503
W. Choi, H. Kamitsuna, M. Ida, Kenji, Kurishima, Tsuneto Kimura
TU1B Session TU1B: Frequency Conversion and Control Circuits 31 Chair: Leonard Reynolds, RF Micro Devices, USA Co-Chair: Fred Schindler, RF Micro Devices, USA TU1B-1 A Subharmonic CMOS Mixer Based on Threshold Voltage Modulation 33 Bevin Perumana, Sudipto Chakraborty, Chang-Ho Lee and Joy Laskar TU1B-2 A 6-30GHz Image-rejection Distributed Resistive MMIC Mixer in a Low Cost Surface Mount Package 37
图1b会议图1b:频率转换和控制电路31主席:Leonard Reynolds, RF Micro Devices, USA联合主席:Fred Schindler, RF Micro Devices, USA基于阈值电压调制的图1b - 1a亚谐波CMOS混频器33 Bevin Perumana, Sudipto Chakraborty, Chang-Ho Lee和Joy Laskar图1b - 1a低成本表面贴装6-30GHz图像抑制分布式电阻MMIC混频器37
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引用次数: 0
Session WE1B: Microwave Acoustic Devices 会议WE1B:微波声学设备
Pub Date : 2005-06-17 DOI: 10.1109/MTT67880.2005.9387821
C. Ruppel, R. Weigel
This session deals with bulk and surface acoustic wave (SAW and BAW) devices. It addresses the newest development trends and results in the fields of film bulk acoustic resonator (FBAR) components, acoustic charge transport (ACT) devices, and theoretical results for SAW components fabricated from high-coupling substrate materials.
本次会议处理体和表面声波(SAW和BAW)设备。介绍了薄膜体声谐振器(FBAR)元件、声电荷输运(ACT)器件领域的最新发展趋势和成果,以及由高耦合衬底材料制造的SAW元件的理论结果。
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引用次数: 0
Session TU4D: Microwave Magnetic Devices 会议TU4D:微波磁器件
Pub Date : 2005-06-17 DOI: 10.1109/MTT67880.2005.9387788
D. Adam, B. El-sharawy
This session comprises seven papers covering recent developments in ferrite phase shifters, lumped element circulators, left-handed ferrite waveguides, microwave inductors and magnetostatic wave (MSW) oscillators. The stress related insertion loss in longitudinal field ferrite devices is analyzed and a method is suggested for screening ferrite rod samples to determine suitability for use in dual-mode phase shifters. A duplexing reciprocal phase shifter is described that integrates a circulator function into the phase shifter structure. Two papers discuss improvements to lumped element isolator and circulator designs through improved techniques and a novel gyrator circuit. A lefthanded periodic, ferrite-filled waveguide structure was modeled and fabricated. Measurements confirmed the existence of pass-bands below the waveguide cut-off frequency. Ferromagnetic RF integrated inductors are described that exhibit a record breaking Q 12 at 1GHz using soft CoNbZr films and closed magnetic circuits. Finally a novel regenerative detector using a MSW resonator is discussed that combines high sensitivity with simplicity and potentially low cost..
本次会议包括七篇论文,涵盖铁氧体移相器、集总元环行器、左旋铁氧体波导、微波电感器和静磁波振荡器的最新进展。分析了纵向磁场铁氧体器件中与应力相关的插入损耗,提出了一种筛选铁氧体棒样品的方法,以确定是否适合用于双模移相器。描述了一种将环行器功能集成到移相器结构中的双工互易移相器。两篇论文讨论了通过改进技术和一种新的旋转电路来改进集总元件隔离器和环行器的设计。模拟并制备了一种左旋周期铁氧体填充波导结构。测量证实了在波导截止频率以下存在通带。铁磁射频集成电感器采用软CoNbZr薄膜和闭合磁路,在1GHz时显示破纪录的q12。最后讨论了一种新型的利用固体垃圾谐振器的再生探测器,该探测器结合了高灵敏度、简单性和潜在的低成本。
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引用次数: 0
A Combined Distributed Amplifier/True-Time-Delay Phase Shifter for Broadband Self-Steering Arrays 用于宽带自转向阵列的分布式放大器/真延时移相器组合
Pub Date : 2005-06-17 DOI: 10.1109/MWSYM.2005.1516613
G. S. Shiroma, R. Miyamoto, W. Shiroma
This paper describes the first combined distributed amplifier/true-time-delay phase shifter. The design reduces the cost and size of broadband self-steering array systems. A proof-of-concept prototype is designed and fabricated using discrete components. The result is a measured gain of 9.5 ± 3 dB from 0.5 to 3.5 GHz with a maximum phase shift of 35° at 3.5 GHz.
本文介绍了第一个分布式放大器/真延时移相器的组合。该设计降低了宽带自导向阵列系统的成本和尺寸。一个概念验证原型的设计和制造使用离散组件。结果是在0.5至3.5 GHz范围内的测量增益为9.5±3db,在3.5 GHz范围内的最大相移为35°。
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引用次数: 2
A Subharmonic CMOS Mixer Based on Threshold Voltage Modulation 基于阈值电压调制的次谐波CMOS混频器
Pub Date : 2005-06-17 DOI: 10.1109/MWSYM.2005.1516513
B. Perumana, S. Chakraborty, Chang-Ho Lee, J. Laskar
A novel CMOS subharmonic mixing technique based on threshold voltage modulation with higher LO-to-RF isolation is presented in this paper. A 2.1GHz subharmonic mixer is designed using this technique in a 0.18µm standard digital CMOS process by applying the LO signals at the bulk terminal of PMOS transistors. The mixer has a measured conversion gain of 10.5dB, an IIP3 of −3.5dBm, and a noise figure of 17.7dB while consuming 2.5mW in each mixer core. This circuit architecture increases the second harmonic LO-to-RF isolation to above 67dB and hence can mitigate LO leakage issues in wireless receivers.
本文提出了一种基于阈值电压调制的新型CMOS亚谐波混合技术,该技术具有较高的低电平与射频隔离度。利用该技术在0.18µm标准数字CMOS工艺中设计了2.1GHz次谐波混频器,并在PMOS晶体管的本体端施加本路信号。该混频器的实测转换增益为10.5dB, IIP3为- 3.5dBm,噪声系数为17.7dB,每个混频器芯消耗2.5mW。这种电路结构将二次谐波低电平到射频隔离提高到67dB以上,因此可以减轻无线接收器中的低电平泄漏问题。
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引用次数: 19
期刊
IEEE MTT-S International Microwave Symposium Digest, 2005.
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