A 4-to-16GHz inverter-based injection-locked quadrature clock generator with phase interpolators for multi-standard I/Os in 7nm FinFET

S. Chen, Lei Zhou, Ian Zhuang, J. Im, Didem Turkur Melek, Jinyung Namkoong, M. Raj, Jaewook Shin, Y. Frans, Ken Chang
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引用次数: 22

Abstract

As ever-increasing bandwidth demand pushes wireline transceiver data-rates beyond 25Gb/s, the clocking solution for multi-protocol support over a wide range of data-rates becomes a key design challenge. In [1], an injection-locked multi-phase clock generator demonstrated wideband operation and a high-resolution phase rotator using CML in 28nm FDSOI CMOS. However, in 7nm FinFET technology, the CML implementation suffers from the reduced supply level and output impedance degradation at high temperatures. In order to scale power consumption with data-rate, CML implementation also needs to employ bias current and load programmability, further impacting its performance. For these reasons, the supply-regulated inverter-based clocking scheme is proposed. Furthermore, the full inverter-based clock chain generates smaller random jitter (RJ) because of the faster edge-rate compared to a CML implementation. Supply regulation, applied as part of the calibration loop, mitigates the sensitivity to inverter delay and edge-rate over the process and temperature variations. This design, benefiting from its mostly-digital structure, adopts “sea of gates” layout style with optimized via patterns and uniform metal tracks, which effectively alleviate the significant parasitic resistance variations on low level metals fabricated by multiple patterning in 7nm FinFET.
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一种基于4至16ghz逆变器的注入锁定正交时钟发生器,具有相位插值器,用于7nm FinFET的多标准I/ o
随着不断增长的带宽需求推动有线收发器数据速率超过25Gb/s,在大范围数据速率下支持多协议的时钟解决方案成为一个关键的设计挑战。在[1]中,一个注入锁定的多相时钟发生器演示了宽带工作和一个高分辨率相位旋转器,使用CML在28nm FDSOI CMOS中。然而,在7nm FinFET技术中,CML实现受到高温下电源水平降低和输出阻抗下降的影响。为了根据数据速率扩展功耗,CML实现还需要采用偏置电流和负载可编程性,从而进一步影响其性能。基于这些原因,提出了基于电源调节逆变器的时钟方案。此外,与CML实现相比,由于更快的边缘速率,基于全逆变器的时钟链产生更小的随机抖动(RJ)。电源调节作为校准回路的一部分,减轻了对过程和温度变化的逆变器延迟和边缘率的敏感性。该设计得益于其大部分数字结构,采用优化过孔图样和均匀金属磁道的“栅极海”布局风格,有效缓解了在7nm FinFET中通过多次图样制造的低能级金属的显著寄生电阻变化。
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