A mutual-negative-resistance quadrature CMOS LC oscillator

A. Worapishet, S. Virunphun, M. Chongcheawchamnan, S. Srisathit
{"title":"A mutual-negative-resistance quadrature CMOS LC oscillator","authors":"A. Worapishet, S. Virunphun, M. Chongcheawchamnan, S. Srisathit","doi":"10.1109/ISCAS.2004.1328959","DOIUrl":null,"url":null,"abstract":"An enhanced quadrature LC oscillator based upon the cross coupling between two magnetic-coupled or mutual negative-resistance oscillators is presented. The use of the mutual-R topology results in the entire elimination of the cross-coupling devices normally required when the traditional negative-G/sub m/ oscillator topology is used, thereby yielding significant benefits to power consumption and phase noise performance. Practical simulated results of 3 GHz single and quadrature-phase mutual-R oscillators in a 0.25 /spl mu/m CMOS technology demonstrate the capability of the topology over the conventional negative-G/sub m/ approach.","PeriodicalId":6445,"journal":{"name":"2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)","volume":"9 1","pages":"IV-137"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2004.1328959","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

An enhanced quadrature LC oscillator based upon the cross coupling between two magnetic-coupled or mutual negative-resistance oscillators is presented. The use of the mutual-R topology results in the entire elimination of the cross-coupling devices normally required when the traditional negative-G/sub m/ oscillator topology is used, thereby yielding significant benefits to power consumption and phase noise performance. Practical simulated results of 3 GHz single and quadrature-phase mutual-R oscillators in a 0.25 /spl mu/m CMOS technology demonstrate the capability of the topology over the conventional negative-G/sub m/ approach.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种互负电阻正交CMOS LC振荡器
提出了一种基于两个磁耦合或互负阻振荡器交叉耦合的增强型正交LC振荡器。互r拓扑的使用完全消除了使用传统负g /sub - m/振荡器拓扑时通常需要的交叉耦合器件,从而在功耗和相位噪声性能方面产生显著的优势。在0.25 /spl mu/m CMOS技术下的3ghz单相和正交互r振荡器的实际仿真结果表明,该拓扑结构优于传统的负g /sub - m/方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Accurate fault detection in switched-capacitor filters using structurally allpass building blocks Silicon on sapphire CMOS architectures for interferometric array readout Implementation of Farrow structure based interpolators with subfilters of odd length Dual-edge triggered level converting flip-flops A novel CMOS double-edge triggered flip-flop for low-power applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1