Focused ion beam milling technology for on-chip wiring modification system for LSI

F. Itoh, A. Shimase, Haraichi Satoshi, Takahashi Takahiko
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Abstract

During debugging logic LSIs, a period to reproduce LSI in order to change the logic design is becoming longer. To reduce the period from several weeks down to one day, an on-chip direct wiring modification system, using the focused ion beam (FIB) milling and the laser CVD, has been developed.This paper describes a precise FIB milling technique for cutting the wirings and making the via holes to the wirings of the LSI. Milling depth control by monitoring the ion induced photo-emissions and the milling strategy to overcome the surface steps of the LSI resulted in the milling depth accuracy of ±0.25μm. The system, consist of the FIB milling described in this paper and the laser CVD, has been applied to the logic modification of the LSIs of Hitachi M880 mainframe computer. Several tens of cuts, vias on an LSI chip were made by FIB, and the several jumper wirings were made by laser CVD. The average yield of modified LSI chips of 91.8% was achieved.
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聚焦离子束铣削技术在LSI片上布线修改系统中的应用
在调试逻辑LSI的过程中,为了改变逻辑设计而复制LSI的时间越来越长。为了将周期从几周缩短到一天,开发了一种使用聚焦离子束(FIB)铣削和激光CVD的片上直接布线修改系统。本文介绍了一种精密的FIB铣削技术,用于在大规模集成电路的布线上切割和打通孔。通过监测离子诱导光发射来控制铣削深度和克服LSI表面台阶的铣削策略,铣削深度精度为±0.25μm。该系统由本文所述的FIB铣削和激光CVD组成,并已应用于日立M880大型计算机lsi的逻辑修改。在一个LSI芯片上用FIB做了几十个切口、过孔,用激光CVD做了几个跳线。改良LSI晶片的平均产率达到91.8%。
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