{"title":"Session TU3B: Hot Carrier Effects and Mixer Technology","authors":"Ho Huang, Z. Bardai","doi":"10.1109/MTT67880.2005.9387840","DOIUrl":null,"url":null,"abstract":"Hot carrier effects become an important consideration as device dimensions shrink to address higher frequency of operation. SiGe mixers have increasing importance due to potential for high level of integration and low cost. This session addresses the hot carrier effects in both GaAs and silicon circuits, 5 GHz mixer development, as well as tunable elements and isolation issues for insulating and silicon substrates.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTT67880.2005.9387840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Hot carrier effects become an important consideration as device dimensions shrink to address higher frequency of operation. SiGe mixers have increasing importance due to potential for high level of integration and low cost. This session addresses the hot carrier effects in both GaAs and silicon circuits, 5 GHz mixer development, as well as tunable elements and isolation issues for insulating and silicon substrates.
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