Optimized pore stuffing for enhanced compatibility with interconnect integration flow

Abstract

Plasma processing of porous órgano-silicate Iowie dielectrics, following the damascene approach. remains one the biggest challenge for IC manufacturing. During low-k plasma etching. reactive radicals (O*, F* amongst others) and VUV penetrate easily into the porous low-k structure, reacting with Si-CH3 terminating bonds, ultimately turning the etched low-k hydrophilic and raising the integrated k-value beyond acceptable limits.