O. Maslyanchuk, V. Strebezhev, P. Fochuk, I. Fodchuk, M. Solovan, M. Sorokatyi, I. Boledzyuk, R. James
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引用次数: 0
Abstract
In this paper, the transformations of the morphology and surface structure of CdTe crystals under the action of pulsed laser radiation and the properties of laser-optimized Schottky diode X/γ-ray detectors developed by Ni and NiO deposition onto commercially available (111) oriented CdTe:Cl wafers has been investigated. Using scanning electron and atomic force microscopy, it was shown that, depending on the energy density and laser pulse duration, the morphology, phase composition and distribution of the system of defects and inclusions in the surface areas of CdTe crystals can be optimized. The analysis of the effect of laser treatment on the electrical and spectrometric properties CdTe X/γ-ray detectors under study was also carried out.
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