Y. Niida, Masaru Sato, M. Nishimori, T. Ohki, N. Nakamura
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引用次数: 3
Abstract
We fabricated a wideband gallium nitride (GaN) power amplifier (PA) using a power combiner with impedance transformation function. We designed a four-way planar impedance transformer power combiner based on the transmission line transformer (TLT) technique. The fabricated PA exhibited an average output power (Pout) of 233 W, average power-added-efficiency (PAE) of 42 %, and average drain efficiency (η) of 47% in the frequency range of 0.5 GHz to 2.1 GHz. The fabricated P A exhibits a wider fractional bandwidth (FBW) than a reported P A with an output power of over 200 W.
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