{"title":"Predictive models for short channel MOS CASCODE current references simulation","authors":"L. Dobrescu, S. Nimara","doi":"10.1109/SMICND.2014.6966464","DOIUrl":null,"url":null,"abstract":"This paper reveals the fine border between classical cascode current references design and the modern circuits simulation using nanometer MOSFETs predictive models. Common MOS parameters used for currents ratio in cascode mirrors must be reconsidered.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"36 1","pages":"291-294"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2014.6966464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reveals the fine border between classical cascode current references design and the modern circuits simulation using nanometer MOSFETs predictive models. Common MOS parameters used for currents ratio in cascode mirrors must be reconsidered.
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