Cu-SnAg Interconnects Evaluation for the Assembly at 10µm and 5µm Pitch

D. Taneja, M. Volpert, G. Lasfargues, B. Chambion, B. Bouillard, Sylvie Jarjayes, T. Chaira, A. Vandeneynde, Y. Goiran, D. Henry, F. Hodaj
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引用次数: 5

Abstract

Several types of interconnects for the finer pitch assembly are currently being investigated across the globe. Here in this paper, a new type of interconnect Ni3Sn4 Interconnect is proposed and evaluated for assembly at 10 pitch and below. The proposed interconnect is compared to traditional solder interconnect. The comparison is done on the basis of shape of the joints in interconnects, the electric yield and mechanical properties. Later, Ni3Sn4 IMC interconnect is also compared to known Cu3Sn IMC Interconnect.
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10µm和5µm间距下组件的Cu-SnAg互连评估
目前,全球正在研究用于更细间距组装的几种类型的互连。本文提出了一种新型的互连Ni3Sn4互连,并对其在10节距及以下的组装进行了评估。并与传统的焊料互连进行了比较。根据连接接头的形状、电导率和力学性能进行了比较。随后,Ni3Sn4 IMC互连也与已知的Cu3Sn IMC互连进行了比较。
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